公开(公告)号：US20170317231A1

公开(公告)日：2017-11-02

申请号：US15523014

申请日：2015-10-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Petrus Sundgren ,  Marco Englhard ,  Martin Rudolf Behringer ,  Christoph Klemp

IPC: H01L33/00 ,  H01L23/00 ,  C23F1/20

CPC classification number: H01L33/0079 ,  C23F1/20 ,  H01L21/67086 ,  H01L21/67092 ,  H01L24/95

Abstract: A method of debonding a substrate from a layer sequence includes a) providing a composite including a wafer with the substrate, the layer sequence applied to a growth surface of the substrate, and a sacrificial layer arranged between the substrate and the layer sequence, a carrier on a cover surface of the layer sequence facing away from the substrate, and at least two separating trenches extending in the vertical direction through the layer sequence and to and/or through the sacrificial layer, b) attaching a pumping device on the composite and forming a second direct flow path between the separating trenches and the pumping device, c) introducing the composite into an etching bath with an etching solution, d) generating a pressure gradient between separating trenches and the etching solution, and e) debonding the substrate.

公开(公告)号：US20180082899A1

公开(公告)日：2018-03-22

申请号：US15558743

申请日：2016-03-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph Klemp ,  Marco Englhard

IPC: H01L21/78 ,  H01L21/306 ,  H01L21/67 ,  H01L21/683 ,  H01L31/18 ,  H01L33/00

CPC classification number: H01L21/7813 ,  H01L21/30625 ,  H01L21/67086 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/7806 ,  H01L31/1892 ,  H01L33/0079 ,  H01L2221/68381

Abstract: A method of detaching a growth substrate from a layer sequence includes introducing at least one wafer composite into an etching bath containing an etching solution such that the etching solution is located at least in regions within separating trenches, repeatedly varying a pressure of a base pressure prevailing in the etching bath with at least one pressure variation device, and detaching the growth substrate, wherein at least one of 1-3 is satisfied: 1) a buffer chamber attached to the etching bath and connected thereto is provided and the volume variation is effected by a movement of a piston or hydraulic plunger introduced into the buffer chamber, 2) the volume variation is at least partly effected with a compressor attached to the etching bath, and 3) the pressure variation is at least partly effected by at least one of removal of a gas and a liquid from the etching bath or by addition of at least one of the gas and the liquid thereto.

公开(公告)号：US10147647B2

公开(公告)日：2018-12-04

申请号：US15558743

申请日：2016-03-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph Klemp ,  Marco Englhard

IPC: H01L21/78 ,  H01L21/306 ,  H01L21/67 ,  H01L21/683 ,  H01L31/18 ,  H01L33/00

Abstract: A method of detaching a growth substrate from a layer sequence includes introducing at least one wafer composite into an etching bath containing an etching solution such that the etching solution is located at least in regions within separating trenches, repeatedly varying a pressure of a base pressure prevailing in the etching bath with at least one pressure variation device, and detaching the growth substrate, wherein at least one of 1-3 is satisfied: 1) a buffer chamber attached to the etching bath and connected thereto is provided and the volume variation is effected by a movement of a piston or hydraulic plunger introduced into the buffer chamber, 2) the volume variation is at least partly effected with a compressor attached to the etching bath, and 3) the pressure variation is at least partly effected by at least one of removal of a gas and a liquid from the etching bath or by addition of at least one of the gas and the liquid thereto.

公开(公告)号：US10950746B2

公开(公告)日：2021-03-16

申请号：US16484553

申请日：2018-02-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Marco Englhard

IPC: H01L33/00 ,  H01L33/30

Abstract: A method for producing a plurality of optoelectronic components are disclosed. In an embodiment, the method includes providing a substrate, epitaxially applying a sacrificial layer on the substrate, wherein the sacrificial layer has a layer thickness greater than 300 nm and comprises AlxGa(1-x)As with 0

公开(公告)号：US20200035854A1

公开(公告)日：2020-01-30

申请号：US16484553

申请日：2018-02-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Marco Englhard

IPC: H01L33/00 ,  H01L33/30

Abstract: A method for producing a plurality of optoelectronic components are disclosed. In an embodiment, the method includes providing a substrate, epitaxially applying a sacrificial layer on the substrate, wherein the sacrificial layer has a layer thickness greater than 300 nm and comprises AlxGa(1-x)As with 0