Invention Application
- Patent Title: IMAGE SENSOR WITH IMPROVED QUANTUM EFFICIENCY FOR INFRARED RADIATION
-
Application No.: US15460992Application Date: 2017-03-16
-
Publication No.: US20180083057A1Publication Date: 2018-03-22
- Inventor: Axel Crocherie , Pierre Emmanuel Marie Malinge
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Priority: FR1658898 20160922
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An integrated image sensor with backside illumination includes a pixel. The pixel is formed by a photodiode within an active semiconductor region having a first face and a second face. A converging lens, lying in front of the first face of the active region, directs received light rays towards a central zone of the active region. At least one diffracting element, having a refractive index different from a refractive index of the active region, is provided at least partly aligned with the central zone at one of the first and second faces.
Public/Granted literature
- US10347677B2 Image sensor with improved quantum efficiency for infrared radiation Public/Granted day:2019-07-09
Information query
IPC分类: