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    Image sensor with high dynamic range
    1.
    发明授权
    Image sensor with high dynamic range 有权

    公开(公告)号：US10397503B2

    公开(公告)日：2019-08-27

    申请号：US15376792

    申请日：2016-12-13

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Pierre Emmanuel Marie Malinge ,  Frederic Lalanne

    IPC: H04N5/359 ,  H04N5/355 ,  H04N5/3745

    Abstract: A photodiode produces photogenerated charges in response to exposure to light. An integration period collects the photogenerated charges. Collected photogenerated charges in excess of an overflow threshold are passed to an overflow sense node. Remaining collected photogenerated charges are passed to a sense node. A first signal representing the overflow photogenerated charges is read from the overflow sense node. A second signal representing the remaining photogenerated charges is read from the sense node.

    Image sensor with improved quantum efficiency for infrared radiation
    5.
    发明授权
    Image sensor with improved quantum efficiency for infrared radiation 有权

    公开(公告)号：US10475836B2

    公开(公告)日：2019-11-12

    申请号：US16414409

    申请日：2019-05-16

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Axel Crocherie ,  Pierre Emmanuel Marie Malinge

    IPC: H01L27/146

    Abstract: An integrated image sensor with backside illumination includes a pixel. The pixel is formed by a photodiode within an active semiconductor region having a first face and a second face. A converging lens, lying in front of the first face of the active region, directs received light rays towards a central zone of the active region. At least one diffracting element, having a refractive index different from a refractive index of the active region, is provided at least partly aligned with the central zone at one of the first and second faces.

    Image sensor with improved quantum efficiency for infrared radiation
    6.
    发明授权
    Image sensor with improved quantum efficiency for infrared radiation 有权

    公开(公告)号：US10347677B2

    公开(公告)日：2019-07-09

    申请号：US15460992

    申请日：2017-03-16

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Axel Crocherie ,  Pierre Emmanuel Marie Malinge

    IPC: H01L27/146

    Abstract: An integrated image sensor with backside illumination includes a pixel. The pixel is formed by a photodiode within an active semiconductor region having a first face and a second face. A converging lens, lying in front of the first face of the active region, directs received light rays towards a central zone of the active region. At least one diffracting element, having a refractive index different from a refractive index of the active region, is provided at least partly aligned with the central zone at one of the first and second faces.

    Image sensor device with first and second source followers and related methods
    8.
    发明授权
    Image sensor device with first and second source followers and related methods 有权
    具有第一和第二源跟随器的图像传感器装置及相关方法

    公开(公告)号：US09570498B2

    公开(公告)日：2017-02-14

    申请号：US14587401

    申请日：2014-12-31

    Applicant: STMICROELECTRONICS (CROLLES 2) SAS

    Inventor： François Roy ,  Frédéric Lalanne ,  Pierre Emmanuel Marie Malinge

    IPC: H01L27/00 ,  H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14689 ,  H04N5/378

    Abstract: An image sensor device may include an array of image sensing pixels arranged in rows and columns. Each image sensing pixel may include an image sensing photodiode, a first source follower transistor coupled to the image sensing photodiode, and a switch coupled to the image sensing photodiode. Each image sensor device may include a second source follower transistor coupled to the switch, and a row selection transistor coupled to the first and second source follower transistors.

    Abstract translation: 图像传感器装置可以包括以行和列排列的图像感测像素阵列。 每个图像感测像素可以包括图像感测光电二极管，耦合到图像感测光电二极管的第一源极跟随器晶体管，以及耦合到图像感测光电二极管的开关。 每个图像传感器装置可以包括耦合到开关的第二源极跟随器晶体管，以及耦合到第一和第二源极跟随器晶体管的行选择晶体管。

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