Invention Application
- Patent Title: METHOD FOR DOPING GRAPHENE, METHOD FOR MANUFACTURING GRAPHENE COMPOSITE ELECTRODE, AND GRAPHENE STRUCTURE COMPRISING SAME
-
Application No.: US15563087Application Date: 2016-04-15
-
Publication No.: US20180083220A1Publication Date: 2018-03-22
- Inventor: Jinsan MOON , Wonbae PARK , Subeom PARK , Insu JO , Byunghee HONG
- Applicant: LG ELECTRONICS INC. , SNU R&DB FOUNDATION
- Applicant Address: KR Seoul KR Seoul
- Assignee: LG ELECTRONICS INC.,SNU R&DB FOUNDATION
- Current Assignee: LG ELECTRONICS INC.,SNU R&DB FOUNDATION
- Current Assignee Address: KR Seoul KR Seoul
- Priority: KR10-2015-0052901 20150415; KR10-2015-0052902 20150415
- International Application: PCT/KR2016/003910 WO 20160415
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L51/00 ; H01L51/56 ; H01B1/04 ; C23C16/511 ; C23C16/26

Abstract:
The present invention relates to graphene and, particularly, to a method for doping graphene using substrate surface modification, a method for manufacturing a graphene composite electrode using graphene and inorganic matter, and a graphene structure comprising the same. The method for doping graphene according to an embodiment of the present invention may comprise the steps of: forming, on a substrate, a precursor polymer layer for doping; and positioning graphene on the substrate on which the precursor polymer layer is formed. In addition, the method for manufacturing a graphene composite electrode according to an embodiment of the present invention may comprise the steps of: forming graphene on catalyst metal; forming a transparent conductive oxide on the graphene; crystallizing the transparent conductive oxide by applying heat of 150° C. or higher; and transferring, to a final substrate, a composite electrode consisting of the graphene and the transparent conductive oxide.
Information query
IPC分类: