公开(公告)号：US20180083220A1

公开(公告)日：2018-03-22

申请号：US15563087

申请日：2016-04-15

Applicant: LG ELECTRONICS INC. ,  SNU R&DB FOUNDATION

Inventor： Jinsan MOON ,  Wonbae PARK ,  Subeom PARK ,  Insu JO ,  Byunghee HONG

IPC: H01L51/52 ,  H01L51/00 ,  H01L51/56 ,  H01B1/04 ,  C23C16/511 ,  C23C16/26

CPC classification number: H01L51/5215 ,  C01B32/20 ,  C23C16/26 ,  C23C16/511 ,  H01B1/04 ,  H01L21/283 ,  H01L29/16 ,  H01L51/0021 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/56 ,  H01L2251/5338

Abstract: The present invention relates to graphene and, particularly, to a method for doping graphene using substrate surface modification, a method for manufacturing a graphene composite electrode using graphene and inorganic matter, and a graphene structure comprising the same. The method for doping graphene according to an embodiment of the present invention may comprise the steps of: forming, on a substrate, a precursor polymer layer for doping; and positioning graphene on the substrate on which the precursor polymer layer is formed. In addition, the method for manufacturing a graphene composite electrode according to an embodiment of the present invention may comprise the steps of: forming graphene on catalyst metal; forming a transparent conductive oxide on the graphene; crystallizing the transparent conductive oxide by applying heat of 150° C. or higher; and transferring, to a final substrate, a composite electrode consisting of the graphene and the transparent conductive oxide.