- 专利标题： METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE
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申请号： US15281993申请日： 2016-09-30
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公开(公告)号： US20180097110A1公开(公告)日： 2018-04-05
- 发明人: Tsung-Mu Yang , Kuang-Hsiu Chen , Chun-Liang Kuo , Tsang-Hsuan Wang , Yu-Ming Hsu , Fu-Cheng Yen , Chung-Min Tsai
- 申请人： UNITED MICROELECTRONICS CORP.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/08 ; H01L29/24 ; H01L29/16 ; H01L29/161 ; H01L29/165 ; H01L29/267 ; H01L29/66 ; H01L21/02
摘要：
A method for manufacturing a semiconductor structure comprises the following steps. First, a recess is formed in a substrate. At least one wet cleaning process is performed to the recess and the substrate. Then, a baking process is performed to the recess and the substrate in an atmosphere containing H2 gas. After the baking process, a dry cleaning process is performed the recess and the substrate.
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