公开(公告)号：US10236179B2

公开(公告)日：2019-03-19

申请号：US15099581

申请日：2016-04-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Fu-Cheng Yen ,  Tsung-Mu Yang ,  Sheng-Hsu Liu ,  Tsang-Hsuan Wang ,  Chun-Liang Kuo ,  Yu-Ming Hsu ,  Chung-Min Tsai ,  Yi-Wei Chen

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/66

Abstract: A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.

公开(公告)号：US20170301536A1

公开(公告)日：2017-10-19

申请号：US15099581

申请日：2016-04-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Fu-Cheng Yen ,  Tsung-Mu Yang ,  Sheng-Hsu Liu ,  Tsang-Hsuan Wang ,  Chun-Liang Kuo ,  Yu-Ming Hsu ,  Chung-Min Tsai ,  Yi-Wei Chen

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/0262 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02639 ,  H01L29/66795 ,  H01L29/7848

Abstract: A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.

公开(公告)号：US20180097110A1

公开(公告)日：2018-04-05

申请号：US15281993

申请日：2016-09-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Mu Yang ,  Kuang-Hsiu Chen ,  Chun-Liang Kuo ,  Tsang-Hsuan Wang ,  Yu-Ming Hsu ,  Fu-Cheng Yen ,  Chung-Min Tsai

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/24 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/267 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7848 ,  H01L21/02057 ,  H01L29/66636 ,  H01L29/66795

Abstract: A method for manufacturing a semiconductor structure comprises the following steps. First, a recess is formed in a substrate. At least one wet cleaning process is performed to the recess and the substrate. Then, a baking process is performed to the recess and the substrate in an atmosphere containing H2 gas. After the baking process, a dry cleaning process is performed the recess and the substrate.