- 专利标题: Power MOSFET With Metal Filled Deep Sinker Contact For CSP
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申请号: US15831112申请日: 2017-12-04
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公开(公告)号: US20180102424A1公开(公告)日: 2018-04-12
- 发明人: Yufei XIONG , Yunlong LIU , Hong YANG , Ho LIN , Tian Ping LV , Sheng ZOU , Qiu Ling JIA
- 申请人: Texas Instruments Incorporated
- 主分类号: H01L29/739
- IPC分类号: H01L29/739 ; H01L21/3213 ; H01L21/283 ; H01L29/78 ; H01L29/06
摘要:
A method of forming an IC including a power semiconductor device includes providing a substrate having an epi layer thereon with at least one transistor formed therein covered by a pre-metal dielectric (PMD) layer. Contact openings are etched from through the PMD into the epi layer to form a sinker trench extending to a first node of the device. A metal fill material is deposited to cover a sidewall and bottom of the sinker trench but not completely fill the sinker trench. A dielectric filler layer is deposited over the metal fill material to fill the sinker trench. An overburden region of the dielectric filler layer is removed stopping on a surface of the metal fill material in the overburden region to form a sinker contact. A patterned interconnect metal is formed providing a connection between the interconnect metal and metal fill material on the sidewall of the sinker trench.
公开/授权文献
- US10903345B2 Power MOSFET with metal filled deep sinker contact for CSP 公开/授权日:2021-01-26