公开(公告)号：US20180102424A1

公开(公告)日：2018-04-12

申请号：US15831112

申请日：2017-12-04

申请人： Texas Instruments Incorporated

发明人： Yufei XIONG ,  Yunlong LIU ,  Hong YANG ,  Ho LIN ,  Tian Ping LV ,  Sheng ZOU ,  Qiu Ling JIA

IPC分类号： H01L29/739 ,  H01L21/3213 ,  H01L21/283 ,  H01L29/78 ,  H01L29/06

CPC分类号： H01L29/7397 ,  H01L21/283 ,  H01L21/3213 ,  H01L21/743 ,  H01L23/485 ,  H01L29/0623 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/405 ,  H01L29/41766 ,  H01L29/7396 ,  H01L29/7398 ,  H01L29/7809 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/7827

摘要： A method of forming an IC including a power semiconductor device includes providing a substrate having an epi layer thereon with at least one transistor formed therein covered by a pre-metal dielectric (PMD) layer. Contact openings are etched from through the PMD into the epi layer to form a sinker trench extending to a first node of the device. A metal fill material is deposited to cover a sidewall and bottom of the sinker trench but not completely fill the sinker trench. A dielectric filler layer is deposited over the metal fill material to fill the sinker trench. An overburden region of the dielectric filler layer is removed stopping on a surface of the metal fill material in the overburden region to form a sinker contact. A patterned interconnect metal is formed providing a connection between the interconnect metal and metal fill material on the sidewall of the sinker trench.

公开(公告)号：US20180006145A1

公开(公告)日：2018-01-04

申请号：US15342896

申请日：2016-11-03

申请人： Texas Instruments Incorporated

发明人： Yufei XIONG ,  Yunlong LIU ,  Hong YANG ,  Ho LIN ,  Tian Ping LV ,  Sheng ZOU ,  Qiu Ling JIA

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L21/3213 ,  H01L29/78 ,  H01L21/283

CPC分类号： H01L29/7397 ,  H01L21/283 ,  H01L21/3213 ,  H01L29/0653 ,  H01L29/7827

摘要： A method of forming an IC including a power semiconductor device includes providing a substrate having an epi layer thereon with at least one transistor formed therein covered by a pre-metal dielectric (PMD) layer. Contact openings are etched from through the PMD into the epi layer to form a sinker trench extending to a first node of the device. A metal fill material is deposited to cover a sidewall and bottom of the sinker trench but not completely fill the sinker trench. A dielectric filler layer is deposited over the metal fill material to fill the sinker trench. An overburden region of the dielectric filler layer is removed stopping on a surface of the metal fill material in the overburden region to form a sinker contact. A patterned interconnect metal is formed providing a connection between the interconnect metal and metal fill material on the sidewall of the sinker trench.