- 专利标题： EBEAM THREE BEAM APERTURE ARRAY
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申请号： US15873782申请日： 2018-01-17
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公开(公告)号： US20180143526A1公开(公告)日： 2018-05-24
- 发明人: Yan A. BORODOVSKY , Donald W. NELSON , Mark C. PHILLIPS
- 申请人： Intel Corporation
- 主分类号： G03F1/20
- IPC分类号： G03F1/20 ; H01J37/04 ; H01J37/302 ; H01J37/317 ; G03F7/20 ; H01L21/768
摘要：
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.
公开/授权文献
- US10067416B2 Ebeam three beam aperture array 公开/授权日：2018-09-04