Invention Application
- Patent Title: HIGH THERMAL CONDUCTIVITY VIAS BY ADDITIVE PROCESSING
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Application No.: US15361399Application Date: 2016-11-26
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Publication No.: US20180151471A1Publication Date: 2018-05-31
- Inventor: Benjamin Stassen Cook , Archana Venugopal , Luigi Colombo , Robert Reid Doering
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/522 ; H01L23/373 ; H01L23/00 ; H01L21/768 ; H01L21/48

Abstract:
An integrated circuit has a substrate and an interconnect region disposed on the substrate. The interconnect region includes a plurality of interconnect levels. Each interconnect level includes interconnects in dielectric material. The integrated circuit includes a thermal via in the interconnect region. The thermal via extends vertically in at least one of the interconnect levels in the interconnect region. The thermal via includes a cohered nanoparticle film in which adjacent nanoparticles are cohered to each other. The thermal via has a thermal conductivity higher than dielectric material touching the thermal via. The cohered nanoparticle film is formed by a method which includes an additive process.
Public/Granted literature
- US11676880B2 High thermal conductivity vias by additive processing Public/Granted day:2023-06-13
Information query
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