- 专利标题： INTRA-METAL CAPACITOR AND METHOD OF FORMING THE SAME
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申请号： US15365906申请日： 2016-11-30
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公开(公告)号： US20180151555A1公开(公告)日： 2018-05-31
- 发明人: Hsin-Hsien Chen , Sheng-Yuan Hsueh , Yi-Chung Sheng , Chih-Kai Kang , Wen-Kai Lin , Shu-Hung Yu
- 申请人： UNITED MICROELECTRONICS CORP.
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L49/02 ; H01L29/06 ; H01L23/528 ; H01L21/768
摘要：
An intra-metal capacitor is provided. The intra-metal capacitor is formed in a dielectric layer and comprising a first electrode and a second electrode, wherein the first electrode penetrate through the whole thickness of the dielectric layer, and the second electrode does not penetrate through the whole thickness of the dielectric layer.
公开/授权文献
- US10002864B1 Intra-metal capacitor and method of forming the same 公开/授权日：2018-06-19
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