- 专利标题： METHOD AND SYSTEM FOR PROCESSING SUBSTRATE BY CHEMICAL SOLUTION IN SEMICONDUCTOR MANUFACTURING FABRICATION
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申请号： US15490075申请日： 2017-04-18
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公开(公告)号： US20180161828A1公开(公告)日： 2018-06-14
- 发明人: Min-An YANG , Hao-Ming CHANG , Shao-Chi WEI , Kuo-Chin LIN , Sheng-Chang HSU , Li-Chih LU , Cheng-Ming LIN
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： B08B3/08
- IPC分类号： B08B3/08 ; H01L21/02 ; H01L21/027 ; H01L21/66 ; H01L21/67 ; B08B3/10 ; H04N5/33 ; G01J5/10 ; G01J5/00
摘要：
A method for processing a substrate is provided. The method includes supplying a first flow of a chemical solution into a processing chamber, configured to process the substrate, via a first dispensing nozzle. The method further includes producing a first thermal image of the first flow of the chemical solution. The method also includes performing an image analysis on the first thermal image. In addition, the method includes moving the substrate into the processing chamber when the result of the analysis of the first thermal image is within the allowable deviation from the baseline.
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