METHOD FOR FORMING PHOTOMASK AND PHOTOLITHOGRAPHY METHOD

    公开(公告)号:US20190163051A1

    公开(公告)日:2019-05-30

    申请号:US16045816

    申请日:2018-07-26

    摘要: A method for forming a photomask is provided. The method includes forming a light blocking layer over a transparent substrate. The method includes forming a mask layer over the light blocking layer. The mask layer covers a first portion of the light blocking layer, and the first portion is over a second portion of the transparent substrate. The method includes removing the light blocking layer, which is not covered by the mask layer. The method includes removing the mask layer. The first portion of the light blocking layer is removed during removing the mask layer. The method includes removing the second portion of the transparent substrate to form a first recess in the transparent substrate. The method includes forming a first light blocking structure in the first recess.