SUPER HYDROPHOBIC SURFACE FABRICATION METHOD

Invention Application

US20180166289A1 SUPER HYDROPHOBIC SURFACE FABRICATION METHOD 审中-公开

Please log in to see more content

Patent Title: SUPER HYDROPHOBIC SURFACE FABRICATION METHOD
Application No.: US15580370

Application Date: 2016-06-07
Publication No.: US20180166289A1

Publication Date: 2018-06-14
Inventor: Chang-Koo KIM , Sung-Woon CHO , Jun-Hyun KIM , Jeong-Geun BAK
Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
Applicant Address: KR Suwon-si, Gyeonggi-do
Assignee: Industry-Academic Cooperation Foundation of Ajou University
Current Assignee: Industry-Academic Cooperation Foundation of Ajou University
Current Assignee Address: KR Suwon-si, Gyeonggi-do
Priority: KR10-2015-0080868 20150608
International Application: PCT/KR2016/006004 WO 20160607
Main IPC: H01L21/3065
IPC: H01L21/3065 ; H01L21/033 ; H01L21/02 ; B32B33/00

SUPER HYDROPHOBIC SURFACE FABRICATION METHOD

Abstract:

The present invention relates to a method for producing a super-hydrophobic surface, and to a stack having a super-hydrophobic surface prepared by the above method. The super-hydrophobic surface may be realized only by plasma etching and deposition. The super-hydrophobic surface according to the present invention has a very low work of adhesion less than or equal to 3 mJ/m2. This super-hydrophobic surface may be applied to various fields including self-cleaning surface, anti-fogging surface, automobile glass surface, and drug delivery device surface.

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀