Invention Application
- Patent Title: Contacts in Semiconductor Devices
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Application No.: US15819049Application Date: 2017-11-21
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Publication No.: US20180174927A1Publication Date: 2018-06-21
- Inventor: Naoto Horiguchi , Andriy Hikavyy , Steven Demuynck
- Applicant: IMEC VZW
- Applicant Address: BE Leuven
- Assignee: IMEC VZW
- Current Assignee: IMEC VZW
- Current Assignee Address: BE Leuven
- Priority: EP16205939.8 20161221
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/02 ; H01L21/306 ; H01L29/08 ; H01L29/78 ; H01L29/786 ; H01L29/06 ; H01L27/092
Abstract:
An example embodiment relates to a method for making a contact to a source or drain region of a semiconductor device. The method may include providing the semiconductor device having at least one source or drain region, the source or drain region having an exposed area. The method may further include partially etching the source or drain region such that the exposed area is increased. The method may further include providing a contact covering at least the etched part of the source or drain region. The contact may contact the source or drain region on at least 3 sides of the source or drain region.
Information query
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