Invention Application
- Patent Title: Core Material, Semiconductor Package, and Forming Method of Bump Electrode
-
Application No.: US15832905Application Date: 2017-12-06
-
Publication No.: US20180174991A1Publication Date: 2018-06-21
- Inventor: Tomoaki Nishino , Shigeki Kondo , Takahiro Hattori , Hiroyoshi Kawasaki , Takahiro Roppongi , Daisuke Soma , Isamu Sato
- Applicant: Senju Metal Industry Co., Ltd.
- Priority: JP2016-237468 20161207
- Main IPC: H01L23/00
- IPC: H01L23/00 ; C22C12/00 ; C22C13/02 ; B23K35/02 ; B23K35/26 ; B23K1/00

Abstract:
A core material including a core and a solder plating layer of a (Sn—Bi)-based solder alloy made of Sn and Bi on a surface of the core. Bi in the solder plating layer is distributed in the solder plating layer at a concentration ratio in a predetermined range of, for example, 91.7% to 106.7%. Bi in the solder plating layer is homogeneous, and thus, a Bi concentration ratio is in a predetermined range over the entire solder plating layer including an inner circumference side and an outer circumference side in the solder plating layer.
Public/Granted literature
- US10381319B2 Core material, semiconductor package, and forming method of bump electrode Public/Granted day:2019-08-13
Information query
IPC分类: