Wafers for fabrication of devices that include a body contact, device structures with a body contact, methods for forming a wafer that supports the fabrication of devices that include a body contact, and methods for forming a device structure that includes a body contact. The wafer includes a buried oxide layer and a semiconductor layer on the buried oxide layer. The semiconductor layer includes a section with a top surface and a plurality of islands projecting from the section of the semiconductor layer into the buried oxide layer. The section of the semiconductor layer is located vertically between the islands of the semiconductor layer and the top surface of the semiconductor layer.