Invention Application
- Patent Title: SEMICONDUCTOR DEVICE MANUFACTURING METHOD
-
Application No.: US15562001Application Date: 2016-03-31
-
Publication No.: US20180175100A1Publication Date: 2018-06-21
- Inventor: Noburo HOSOKAWA , Nao INOUE , Katsumi SHIBAYAMA
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Priority: JP2015-070697 20150331
- International Application: PCT/JP2016/060832 WO 20160331
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L23/00

Abstract:
A method includes a first process in which a first wiring is provided on a surface of a semiconductor substrate; a second process in which a light transmitting substrate is attached to the surface; a third process in which the semiconductor substrate is thinned so that the thickness of the semiconductor substrate is smaller than the thickness of the light transmitting substrate; a fourth process in which a through hole is formed in the semiconductor substrate; a fifth process in which a dip coating method is performed using a resin material and thus a resin insulating layer is provided; a sixth process in which a contact hole is formed in the resin insulating layer; and a seventh process in which a second wiring is provided on a surface of the resin insulating layer, and the first wiring and the second wiring are electrically connected via a contact hole.
Public/Granted literature
- US10403676B2 Semiconductor device manufacturing method Public/Granted day:2019-09-03
Information query
IPC分类: