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公开(公告)号：US20240030366A1
公开(公告)日：2024-01-25
申请号：US18265010
申请日：2021-09-08
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Hayato ISHIDA , Masaki HIROSE , Noburo HOSOKAWA , Soh UENOYAMA , Kazuyoshi HIROSE , Kazunori TANAKA
IPC: H01L31/0232 , H01L31/0216
CPC classification number: H01L31/02327 , H01L31/02161
Abstract: The light detector includes: a substrate including at least one light receiving area and a light incident surface on which light is incident; and a meta-lens formed on the light incident surface of the substrate to focus the light incident on the light incident surface. When viewed from the thickness direction (Z-axis direction) of the substrate, the meta-lens is formed so as to overlap both an adjacent region adjacent to the light receiving area and a peripheral region that is continuous with the adjacent region and is a region inside the light receiving area along the outer edge of the light receiving area. When viewed from the Z-axis direction, a non-forming region in which the meta-lens is not formed is provided in a region overlapping a central region of the light receiving area in the light incident surface.
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公开(公告)号：US20200049974A1
公开(公告)日：2020-02-13
申请号：US16492672
申请日：2018-03-14
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tatsuya SUGIMOTO , Kyosuke KOTANI , Tomofumi SUZUKI , Katsumi SHIBAYAMA , Noburo HOSOKAWA , Nao INOUE , Masashi ITO , Yutaka KURAMOTO
Abstract: A light module includes an optical element and a base on which the optical element is mounted. The optical element has an optical portion which has an optical surface; an elastic portion which is provided around the optical portion such that an annular region is formed; and a pair of support portions which is provided such that the optical portion is sandwiched in a first direction along the optical surface and in which an elastic force is applied and a distance therebetween is able to be changed in accordance with elastic deformation of the elastic portion. The base has a main surface, and a mounting region in which an opening communicating with the main surface is provided. The support portions are inserted into the opening in a state where an elastic force of the elastic portion is applied.
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公开(公告)号：US20190341420A1
公开(公告)日：2019-11-07
申请号：US16514003
申请日：2019-07-17
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Noburo HOSOKAWA , Nao INOUE , Katsumi SHIBAYAMA
IPC: H01L27/146 , H01L23/00 , H01L31/0216 , H01L23/48 , H01L21/768 , H01L31/103 , H01L21/3205 , H01L23/522 , H01L23/532 , H01L31/02 , H01L31/107 , H01L31/0224
Abstract: A method of manufacturing a semiconductor device includes a first process in which a first wiring 3 is provided on a first surface 2a of a semiconductor substrate 2; a second process in which a light transmitting substrate 5 is attached to the first surface 2a; a third process in which the semiconductor substrate 2 is thinned so that the thickness of the semiconductor substrate 2 is smaller than the thickness of the light transmitting substrate 5; a fourth process in which a through hole 7 is formed in the semiconductor substrate 2; a fifth process in which a dip coating method is performed using a first resin material and thus a resin insulating layer 10 is provided; a sixth process in which a contact hole 16 is formed in the resin insulating layer 10; and a seventh process in which a second wiring 8 is provided on a surface 10b of the resin insulating layer 10, and the first wiring 3 and the second wiring 8 are electrically connected via a contact hole 16.
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公开(公告)号：US20160254307A1
公开(公告)日：2016-09-01
申请号：US15150859
申请日：2016-05-10
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Terumasa NAGANO , Noburo HOSOKAWA , Tomofumi SUZUKI , Takashi BABA
IPC: H01L27/146 , H01L31/107
CPC classification number: H01L27/14643 , H01L27/1446 , H01L27/14618 , H01L27/14636 , H01L27/14658 , H01L31/107
Abstract: A light detection device 1 has a semiconductor light detection element having a semiconductor substrate, and a mounting substrate arranged as opposed to the semiconductor light detection element. The semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in the semiconductor substrate, and electrodes electrically connected to the respective avalanche photodiodes and arranged on a second principal surface side of the semiconductor substrate. The mounting substrate includes a plurality of electrodes arranged corresponding to the respective electrodes on a third principal surface side, and quenching resistors electrically connected to the respective electrodes and arranged on the third principal surface side. The electrodes and the electrodes are connected through bump electrodes.
Abstract translation: 光检测装置1具有半导体光检测元件，该半导体光检测元件具有半导体衬底和与半导体光检测元件相对布置的安装衬底。 半导体光检测元件包括以Geiger模式操作并形成在半导体衬底中的多个雪崩光电二极管，以及电连接到各个雪崩光电二极管并且布置在半导体衬底的第二主表面侧上的电极。 安装基板包括在第三主面侧对应于各个电极布置的多个电极，并且电连接到各个电极并且布置在第三主表面侧上的淬火电阻。 电极和电极通过凸块电极连接。
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公开(公告)号：US20150340402A1
公开(公告)日：2015-11-26
申请号：US14646406
申请日：2013-11-26
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tatsumi YAMANAKA , Akira SAKAMOTO , Noburo HOSOKAWA
IPC: H01L27/146 , H01L31/0224
CPC classification number: H01L27/14663 , H01L27/14603 , H01L27/14636 , H01L31/022408 , H01L31/10 , H01L31/103
Abstract: A photodiode array includes a plurality of photodiodes formed in a semiconductor substrate. Each of the photodiodes includes a first semiconductor region of a first conductivity type, and provided in the semiconductor substrate, a second semiconductor region of a second conductivity type, provided with respect to the first semiconductor region on one surface side of the semiconductor substrate so as to surround a predetermined region, and constituting a light detection region together with the first semiconductor region, and a through-electrode provided within a through-hole passing through the one surface and the other surface of the semiconductor substrate so as to pass through the first semiconductor region and the predetermined region, and electrically connected to the second semiconductor region. The through-hole includes a portion expanded from the one surface toward the other surface.
Abstract translation: 光电二极管阵列包括形成在半导体衬底中的多个光电二极管。 每个光电二极管包括第一导电类型的第一半导体区域，并且设置在半导体衬底中，相对于半导体衬底的一个表面侧上的第一半导体区域提供第二导电类型的第二半导体区域，以便 围绕预定区域并与第一半导体区域一起构成光检测区域;以及通孔，其设置在穿过半导体衬底的一个表面和另一个表面的通孔内，以穿过第一半导体区域 半导体区域和预定区域，并且电连接到第二半导体区域。 通孔包括从一个表面朝向另一个表面膨胀的部分。
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Patent Agency Ranking
公开(公告)号：US20180175100A1
公开(公告)日：2018-06-21
申请号：US15562001
申请日：2016-03-31
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Noburo HOSOKAWA , Nao INOUE , Katsumi SHIBAYAMA
IPC: H01L27/146 , H01L23/00
CPC classification number: H01L27/14687 , H01L21/3205 , H01L21/768 , H01L21/76898 , H01L23/481 , H01L23/522 , H01L23/532 , H01L24/02 , H01L24/05 , H01L24/13 , H01L27/14632 , H01L27/14636 , H01L27/14643 , H01L31/02005 , H01L31/0203 , H01L31/02161 , H01L31/022408 , H01L31/103 , H01L31/107 , H01L2224/02313 , H01L2224/0233 , H01L2224/0235 , H01L2224/0236 , H01L2224/02371 , H01L2224/02372 , H01L2224/02381 , H01L2224/0345 , H01L2224/05558 , H01L2224/05567 , H01L2224/0557 , H01L2224/10126 , H01L2224/11 , H01L2224/12105 , H01L2224/13007 , H01L2224/13009 , H01L2224/13021 , H01L2224/13022 , H01L2224/13024 , H01L2224/13025 , H01L2924/10253 , H01L2924/12043 , H01L2924/351 , H01L2924/00014
Abstract: A method includes a first process in which a first wiring is provided on a surface of a semiconductor substrate; a second process in which a light transmitting substrate is attached to the surface; a third process in which the semiconductor substrate is thinned so that the thickness of the semiconductor substrate is smaller than the thickness of the light transmitting substrate; a fourth process in which a through hole is formed in the semiconductor substrate; a fifth process in which a dip coating method is performed using a resin material and thus a resin insulating layer is provided; a sixth process in which a contact hole is formed in the resin insulating layer; and a seventh process in which a second wiring is provided on a surface of the resin insulating layer, and the first wiring and the second wiring are electrically connected via a contact hole.
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公开(公告)号：US20160322405A1
公开(公告)日：2016-11-03
申请号：US15207569
申请日：2016-07-12
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Terumasa NAGANO , Noburo HOSOKAWA , Tomofumi SUZUKI , Takashi BABA
IPC: H01L27/144 , H01L49/02 , H01L31/0232 , H01L31/107 , H01L31/02
CPC classification number: H01L27/1446 , H01L27/1443 , H01L27/14605 , H01L28/20 , H01L31/02005 , H01L31/02322 , H01L31/107 , H01L2224/11
Abstract: A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.
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公开(公告)号：US20150137298A1
公开(公告)日：2015-05-21
申请号：US14605120
申请日：2015-01-26
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Terumasa NAGANO , Noburo HOSOKAWA , Tomofumi SUZUKI , Takashi BABA
IPC: H01L27/144 , H01L31/0232 , H01L31/107
CPC classification number: H01L27/1446 , H01L27/1443 , H01L27/14605 , H01L28/20 , H01L31/02005 , H01L31/02322 , H01L31/107 , H01L2224/11
Abstract: A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.
Abstract translation: 半导体光检测元件具有多个通道，每个通道由包括以盖革模式操作的多个雪崩光电二极管的光电二极管阵列组成，与各雪崩光电二极管串联连接的淬火电阻器，以及淬灭电阻器 并联连接 安装基板被配置为使得与第三主面对应的多个电极布置在第三主表面上，并且使得用于处理来自各个通道的输出信号的信号处理单元被布置在第四主表面侧。 在半导体基板中，形成与各信道电连接的信号线的通孔电极。 通孔电极和电极通过凸块电极电连接。
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公开(公告)号：US20210132364A1
公开(公告)日：2021-05-06
申请号：US16625684
申请日：2018-07-06
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tomofumi SUZUKI , Kyosuke KOTANI , Tatsuya SUGIMOTO , Yutaka KURAMOTO , Katsumi SHIBAYAMA , Noburo HOSOKAWA , Hirokazu YAMAMOTO , Takuo KOYAMA
Abstract: A mirror unit 2 includes a mirror device 20 including a base 21 and a movable mirror 22, an optical function member 13, and a fixed mirror 16 that is disposed on a side opposite to the mirror device 20 with respect to the optical function member 13. The mirror device 20 is provided with a light passage portion 24 that constitutes a first portion of an optical path between the beam splitter unit 3 and the fixed mirror 16. The optical function member 13 is provided with a light transmitting portion 14 that constitutes a second portion of the optical path between the beam splitter unit 3 and the fixed mirror 16. A second surface 21b of the base 21 and a third surface 13a of the optical function member 13 are joined to each other.
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公开(公告)号：US20190172965A1
公开(公告)日：2019-06-06
申请号：US16323810
申请日：2017-11-09
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi ISHIDA , Takashi BABA , Terumasa NAGANO , Noburo HOSOKAWA
IPC: H01L31/107 , H01L27/144 , H01L27/146 , H01L31/0224
Abstract: A photodetecting device includes a semiconductor substrate including a first principal surface and a second principal surface that oppose each other and a plurality of through-electrodes penetrating through the semiconductor substrate in a thickness direction. The semiconductor substrate includes a plurality of avalanche photodiodes arranged to operate in Geiger mode. The plurality of through-electrodes are electrically connected to the corresponding avalanche photodiodes. The semiconductor substrate includes a first area in which the plurality of avalanche photodiodes are distributed in at least a first direction and a second area in which the plurality of through-electrodes are distributed two-dimensionally. The first area and the second area are distributed in a second direction orthogonal to a first direction when viewed from a direction orthogonal to the first principal surface.
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