- 专利标题: ORGANIC ELECTROLUMINESCENT DEVICE AND MANUFACTURING METHOD THEREOF
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申请号: US15737179申请日: 2016-06-15
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公开(公告)号: US20180175294A1公开(公告)日: 2018-06-21
- 发明人: Lian Duan , Dongdong Zhang , Song Liu , Jing Xie , Fei Zhao
- 申请人: KUNSHAN GO-VISIONOX OPTO-ELECTRONICS CO., LTD. , TSINGHUA UNIVERSITY
- 优先权: CN201510334281.9 20150616
- 国际申请: PCT/CN2016/085802 WO 20160615
- 主分类号: H01L51/00
- IPC分类号: H01L51/00 ; C07C211/61 ; C07D221/20 ; C07D413/10 ; C07D413/14 ; C07D403/10 ; C07D417/14 ; C07D487/16 ; C07D403/14 ; C07D241/48 ; C07D417/10 ; C07D209/86 ; C07C317/36 ; C07D219/02 ; C07D265/38 ; C07D487/14 ; C07C255/58 ; C07D209/80 ; C07D285/14 ; C07D417/04 ; C07F3/06 ; C07F3/02 ; C07F1/02 ; C07D471/20
摘要:
Disclosed is an organic electroluminescent device, comprising a substrate and light emitting units formed in sequence on the substrate, characterized in that, each of the light emitting units comprises a first electrode layer (1), a light emitting layer (2) and a second electrode layer (3), the light emitting layer comprises a host material and a dye, the host material is made of materials having both electron transport capability and hole transport capability; at least one material in the host material has a CT excited triplet state energy level T1 greater than its n-π excited triplet state energy level S1, and T1-S1≤0.3 eV; or, at least one material in the host material has a CT excited triplet state energy level T1 greater than its n-π excited triplet state energy level S1, and T1-S1≥1 eV, with the difference between its n-π excited second triplet state energy level and its CT excited first singlet state energy level being in the range of −0.1 eV to 0.1 eV. The organic electroluminescent device configuration can sufficiently utilize the triplet state energy in the host material and the dye to increase the luminous efficiency and prolong the service life of the device.
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