- 专利标题： DUAL CHANNEL FINFETS HAVING UNIFORM FIN HEIGHTS
-
申请号： US15435627申请日： 2017-02-17
-
公开(公告)号： US20180240713A1公开(公告)日： 2018-08-23
- 发明人: Zhenxing Bi , Kangguo Cheng , Peng Xu , Jie Yang
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/092 ; H01L21/306 ; H01L21/308 ; H01L29/36 ; H01L29/78 ; H01L29/66
摘要：
A method of making a semiconductor device including forming a first blanket layer on a substrate; forming a second blanket layer on the first blanket layer; patterning a first fin of a first transistor region and a second fin of a second transistor region in the first blanket layer and the second blanket layer; depositing a mask on the second transistor region; removing the first fin to form a trench; growing a first semiconductor layer in the trench where the first fin was removed; and growing a second semiconductor layer on the first semiconductor layer.
公开/授权文献
- US10438855B2 Dual channel FinFETs having uniform fin heights 公开/授权日：2019-10-08
信息查询
IPC分类:
