- 专利标题： CONTROL OF DIRECTIONALITY IN ATOMIC LAYER ETCHING
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申请号： US15615691申请日： 2017-06-06
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公开(公告)号： US20180247832A1公开(公告)日： 2018-08-30
- 发明人: Andreas Fischer , Thorsten Lill , Richard Janek
- 申请人： Lam Research Corporation
- 主分类号： H01L21/3213
- IPC分类号： H01L21/3213 ; H01L21/225 ; H01L21/326 ; H01L21/02 ; H01L21/311
摘要：
A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer is effected via a ligand exchange reaction that is configured to volatilize the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation.
公开/授权文献
- US10229837B2 Control of directionality in atomic layer etching 公开/授权日：2019-03-12
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