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公开(公告)号：US20220293431A1
公开(公告)日：2022-09-15
申请号：US17805081
申请日：2022-06-02
IPC分类号： H01L21/311 , H01L21/3213
摘要： Disclosed are apparatuses and methods for performing atomic layer etching. A method may include supporting and thermally floating a substrate in a processing chamber, modifying one or more surface layers of material on the substrate by chemical adsorption, without using a plasma, while the substrate is maintained at a first temperature, and removing the one or more modified surface layers by desorption, without using a plasma, while the substrate is maintained at a second temperature, the first temperature being different than the second temperature. An apparatus may include a processing chamber and support features configured to support and thermally float a substrate in the chamber, a process gas unit configured to flow a first process gas onto the substrate, a substrate heating unit configured to heat the substrate, and a substrate cooling unit configured to actively cool the substrate.
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公开(公告)号：US10784118B2
公开(公告)日：2020-09-22
申请号：US16289428
申请日：2019-02-28
发明人： Andreas Fischer , Thorsten Lill , Richard Janek , John Boniface
IPC分类号： C23C16/02 , C23F1/00 , C23F1/12 , C23F4/00 , H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/3213
摘要： A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, to remove the modified layer from the substrate surface, wherein removing the modified layer includes exposing the substrate surface to a metal complex, such that a ligand exchange reaction occurs between the metal complex and converted species of the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues formed from the exposure of the substrate surface to the metal complex, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.
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公开(公告)号：US10692724B2
公开(公告)日：2020-06-23
申请号：US15849306
申请日：2017-12-20
发明人： David Smith , Thorsten Lill , Andreas Fischer
IPC分类号： H01L21/3065 , H01L21/311 , H01J37/32 , H01L21/768 , H01L21/66
摘要： A method for performing atomic layer etching of a surface of a substrate is provided, including: performing a surface conversion operation by exposing the surface of the substrate to a surface conversion reactant; performing a ligand exchange operation by exposing the surface of the substrate to a ligand containing reactant; performing a desorption operation that effects removal of surface species from the surface of the substrate; performing a purge operation; repeating the surface conversion operation, the ligand exchange operation, the desorption operation, and the purge operation, for a predefined number of cycles.
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公开(公告)号：US20190340316A1
公开(公告)日：2019-11-07
申请号：US15970744
申请日：2018-05-03
发明人： Thorsten Lill , Andreas Fischer , Ivan L. Berry, III , Nerissa Sue Draeger , Richard A. Gottscho
摘要： Etch in a thermal etch reaction is predicted using a machine learning model. Chemical characteristics of an etch process and associated energies in one or more reaction pathways of a given thermal etch reaction are identified using a quantum mechanical simulation. Labels indicative of etch characteristics may be associated with the chemical characteristics and associated energies of the given thermal etch reaction. The machine learning model can be trained using chemical characteristics and associated energies as independent variables and labels as dependent variables across many different etch reactions of different types. When chemical characteristics and associated energies for a new thermal etch reaction are provided as inputs in the machine learning model, the machine learning model can accurately predict etch characteristics of the new thermal etch reaction as outputs.
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公开(公告)号：US20170256416A1
公开(公告)日：2017-09-07
申请号：US15435838
申请日：2017-02-17
发明人： Andreas Fischer , Thorsten Lill , Richard Janek , John Boniface
IPC分类号： H01L21/311 , C23F1/00 , H01J37/32
CPC分类号： H01L21/31122 , B81C2201/0135 , B81C2201/0142 , C23C16/0245 , C23F1/00 , C23F1/12 , C23F4/00 , H01J37/32009 , H01J37/32082 , H01J2237/334 , H01L21/30655 , H01L21/32136
摘要： A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, the removal operation configured to remove the modified layer from the substrate surface, wherein removing the modified layer occurs via a ligand exchange reaction that is configured to volatilize the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues generated by the removal operation from the substrate surface, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.
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公开(公告)号：US09564285B2
公开(公告)日：2017-02-07
申请号：US13942502
申请日：2013-07-15
发明人： Andreas Fischer , John Holland
CPC分类号： H01J37/00 , H01J37/32091 , H01J37/32366 , H01J37/32385 , H01J37/32568 , H01J37/32642 , H01L2221/00
摘要： A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.
摘要翻译： 一种等离子体处理系统，至少具有用于对基板进行等离子体处理并利用至少第一处理状态和第二处理状态的等离子体处理室。 在第一处理过程期间，等离子体存在于衬底的中心区域之上，以在第一处理状态期间至少执行中心区域的等离子体处理。 在第二处理状态期间，等离子体不存在于基板的中心区域上方，但在斜边缘区域附近存在，以至少在第二处理状态期间执行斜面边缘区域的等离子体处理。 在第二处理状态期间，上电极处于RF浮置状态，并且衬底设置在下电极表面上。
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公开(公告)号：US20130316547A1
公开(公告)日：2013-11-28
申请号：US13958391
申请日：2013-08-02
IPC分类号： H01L21/02
CPC分类号： H01L21/02274 , H01L21/28097 , H01L21/28518 , H01L29/517
摘要： A method for processing a wafer with a wafer bevel that surrounds a central region is provided. The wafer is placed in a bevel plasma processing chamber. A protective layer is deposited on the wafer bevel without depositing the protective layer over the central region. The wafer is removed from the bevel plasma processing chamber. The wafer is further processed.
摘要翻译： 提供了一种用于处理具有围绕中心区域的晶片斜面的晶片的方法。 将晶片放置在斜面等离子体处理室中。 保护层沉积在晶片斜面上，而不在中心区域上沉积保护层。 从斜面等离子体处理室移除晶片。 晶片进一步处理。
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公开(公告)号：US11380556B2
公开(公告)日：2022-07-05
申请号：US17103519
申请日：2020-11-24
IPC分类号： H01L21/311 , H01L21/3213 , H01L21/02
摘要： Disclosed are apparatuses and methods for performing atomic layer etching. A method may include supporting and thermally floating a substrate in a processing chamber, modifying one or more surface layers of material on the substrate by chemical adsorption, without using a plasma, while the substrate is maintained at a first temperature, and removing the one or more modified surface layers by desorption, without using a plasma, while the substrate is maintained at a second temperature, the first temperature being different than the second temperature. An apparatus may include a processing chamber and support features configured to support and thermally float a substrate in the chamber, a process gas unit configured to flow a first process gas onto the substrate, a substrate heating unit configured to heat the substrate, and a substrate cooling unit configured to actively cool the substrate.
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公开(公告)号：US10559475B2
公开(公告)日：2020-02-11
申请号：US16255606
申请日：2019-01-23
发明人： Andreas Fischer , Thorsten Lill , Richard Janek
IPC分类号： H01L21/3213 , H01L21/02 , H01L21/311 , H01L21/225 , H01L21/326 , H01L21/67
摘要： A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer includes applying thermal energy to effect desorption of the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation.
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公开(公告)号：US10354887B2
公开(公告)日：2019-07-16
申请号：US15717076
申请日：2017-09-27
发明人： Andreas Fischer , Nerissa Draeger
IPC分类号： H01L21/311 , H01L21/02 , H01L21/67 , H01J37/32
摘要： A method for etching a metal oxide layer on a semiconductor substrate, comprising providing a plurality of cycles, is provided. Each cycle comprises exposing the metal oxide layer to a reactive hydrogen-containing gas or plasma to transform a part of the metal oxide layer into a layer of metal hydride, stopping the exposing the metal oxide layer to the reactive hydrogen-containing gas or plasma, heating the layer of metal hydride to at least a sublimation temperature to sublime the layer of metal hydride, and cooling the metal oxide layer to a temperature below the sublimation temperature.
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