Invention Application
- Patent Title: SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
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Application No.: US15919762Application Date: 2018-03-13
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Publication No.: US20180264504A1Publication Date: 2018-09-20
- Inventor: Keisuke Egashira , Gentaro Goshi , Hiroshi Marumoto , Kento Tsukano
- Applicant: Tokyo Electron Limited
- Priority: JP2017-048116 20170314; JP2017-048132 20170314
- Main IPC: B05C5/02
- IPC: B05C5/02 ; B05C11/10 ; B05D1/26 ; H01L21/67 ; H01L21/02

Abstract:
Provided is a substrate processing apparatus in which a drying process of drying a substrate using a processing fluid in a supercritical state is performed. The substrate processing apparatus includes: a processing container in which the drying process is performed; a discharge valve provided in a discharge flow path that discharges the processing fluid from the processing container; and a controller configured to control the discharge valve. When the inside of the processing container is decompressed from a first pressure at which the processing fluid is in the supercritical state to an atmospheric pressure, through a second pressure than the first pressure and a third pressure lower than the second pressure, the controller controls a valve opening degree of the discharge valve so that the decompression rate is equal from the second pressure to the third pressure.
Public/Granted literature
- US10576493B2 Substrate processing apparatus and substrate processing method Public/Granted day:2020-03-03
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