公开(公告)号：US20240096658A1

公开(公告)日：2024-03-21

申请号：US18469673

申请日：2023-09-19

申请人： Tokyo Electron Limited

发明人： Toyohisa Tsuruda ,  Hiroshi Marumoto ,  Suguen Lee ,  Masashi Enomoto

IPC分类号： H01L21/67 ,  G06N20/00

CPC分类号： H01L21/6708 ,  G06N20/00 ,  H01L21/67051 ,  H01L21/67253

摘要： An etching control device includes an updating unit configured to update, to optimize a model indicating a relationship between distribution of an etching amount within a surface of a substrate and a process parameter, which is a parameter of controlling operations of multiple nozzles configured to etch the substrate, a parameter of the model; a calculator configured to calculate the process parameter corresponding to distribution of a designated etching amount by using the model whose parameter has been updated by the updating unit; and an operation controller configured to control the operations of the multiple nozzles by using the process parameter.

公开(公告)号：US20220388022A1

公开(公告)日：2022-12-08

申请号：US17341105

申请日：2021-06-07

申请人： Tokyo Electron Limited

发明人： Michael Carcasi ,  Ihsan Simms ,  Joel Estrella ,  Antonio Luis Pacheco Rotondaro ,  Joshua Hooge ,  Hiroshi Marumoto

IPC分类号： B05C3/04 ,  B05C11/10 ,  H01L21/02 ,  H01L21/311 ,  B08B3/10

摘要： A method of processing a plurality of substrates includes immersing the plurality of substrates into a bath solution contained in a bath chamber; generating gas bubbles in the bath solution; projecting light from a light source toward the bath chamber; generating light sensor data by capturing light emanating off the bath chamber after interacting with the gas bubbles with a light sensor; and converting the light sensor data into a metric for the bath solution.

公开(公告)号：US20140137893A1

公开(公告)日：2014-05-22

申请号：US14083673

申请日：2013-11-19

申请人： Tokyo Electron Limited

发明人： Takahisa Otsuka ,  Nobuhiro Ogata ,  Hiroshi Marumoto ,  Terufumi Wakiyama

IPC分类号： H01L21/67 ,  H01L21/02

CPC分类号： H01L21/02041 ,  H01L21/02052 ,  H01L21/67028 ,  H01L21/67051

摘要： In example embodiments, a supply flow rate of a clean gas can be reduced without decreasing process performance. A flow rate of a clean gas 78, having a low humidity, supplied from a clean gas supply device 70 or 78 when a drying process is performed on a substrate is set to be smaller than a flow rate of a clean gas 70 supplied from the clean gas supply device 70 or 78 into an internal space within a housing 60 when a liquid process is performed onto the substrate W, and a flow rate of a gas exhausted through the housing exhaust path when the drying process is performed is set to be smaller than a flow rate of a gas exhausted through the housing exhaust path 64 when the liquid process is performed.

摘要翻译： 在示例性实施例中，可以减少清洁气体的供应流量而不降低工艺性能。 当在基板上进行干燥处理时，从清洁气体供给装置70或78供给的具有低湿度的清洁气体78的流量被设定为小于从该基板供给的清洁气体70的流量 清洁气体供给装置70或78进入到壳体60内的内部空间中，当对基板W进行液体处理时，将进行干燥处理时通过壳体排出路径排出的气体的流量设定得较小 比当进行液体处理时通过壳体排气路径64排出的气体的流量高。

公开(公告)号：US20230307271A1

公开(公告)日：2023-09-28

申请号：US18188715

申请日：2023-03-23

申请人： Tokyo Electron Limited

发明人： Hiroshi Marumoto

IPC分类号： H01L21/67 ,  B08B3/02 ,  B08B13/00 ,  G06T7/00 ,  G06T7/50

CPC分类号： H01L21/67242 ,  H01L21/67023 ,  B08B3/022 ,  B08B13/00 ,  G06T7/0008 ,  G06T7/50 ,  G06T2207/30164 ,  G06T2207/30148

摘要： A substrate processing apparatus includes an inspection substrate including a base and an imaging unit disposed at the base; a holder configured to hold a substrate or the inspection substrate; a driving unit configured to rotate the holder; a processing liquid supply having a nozzle configured to discharge a processing liquid to the substrate held by the holder; and a controller. The controller is configured to perform: adjusting a position of the imaging unit with respect to the nozzle to a predetermined first imaging position by controlling the driving unit to rotate the holder in a state that the inspection substrate is held by the holder; and imaging, after the adjusting of the position of the imaging unit to the first imaging position, the nozzle at the first imaging position by controlling the imaging unit.

公开(公告)号：US10576493B2

公开(公告)日：2020-03-03

申请号：US15919762

申请日：2018-03-13

申请人： Tokyo Electron Limited

发明人： Keisuke Egashira ,  Gentaro Goshi ,  Hiroshi Marumoto ,  Kento Tsukano

IPC分类号： B05C5/02 ,  B05C11/10 ,  H01L21/02 ,  H01L21/67 ,  B05D1/26

摘要： Provided is a substrate processing apparatus in which a drying process of drying a substrate using a processing fluid in a supercritical state is performed. The substrate processing apparatus includes: a processing container in which the drying process is performed; a discharge valve provided in a discharge flow path that discharges the processing fluid from the processing container; and a controller configured to control the discharge valve. When the inside of the processing container is decompressed from a first pressure at which the processing fluid is in the supercritical state to an atmospheric pressure, through a second pressure than the first pressure and a third pressure lower than the second pressure, the controller controls a valve opening degree of the discharge valve so that the decompression rate is equal from the second pressure to the third pressure.

公开(公告)号：US20200020550A1

公开(公告)日：2020-01-16

申请号：US16495142

申请日：2018-03-13

申请人： Tokyo Electron Limited

发明人： Gentaro Goshi ,  Keisuke Egashira ,  Kento Tsukano ,  Hiroshi Marumoto

IPC分类号： H01L21/67 ,  H01L21/66 ,  H01L21/02 ,  B08B7/00

摘要： A substrate processing apparatus 1 includes a drying processing unit 17, a drain line L2, an acquisition device 75 and a determination unit 19C. The drying processing unit 17 is configured to perform, by bringing a supercritical fluid into contact with a substrate having a surface wet by a liquid to replace the liquid with the supercritical fluid, a drying processing on the substrate. The drain line L2 is provided in the drying processing unit 17, and configured to drain the fluid from the drying processing unit 17. The acquisition device 75 is provided on the drain line L2, and configured to acquire optical information upon the fluid drained from the drying processing unit 17. The determination unit 19C is configured to detect presence or absence of the liquid within the drying processing unit 17 based on the optical information acquired by the acquisition device 75.

公开(公告)号：US20180130675A1

公开(公告)日：2018-05-10

申请号：US15801803

申请日：2017-11-02

申请人： Tokyo Electron Limited

发明人： Gentaro Goshi ,  Keisuke Egashira ,  Yosuke Kawabuchi ,  Hiromi Kiyose ,  Takuro Masuzumi ,  Hiroki Ohno ,  Kento Tsukano ,  Hiroshi Marumoto ,  Shotaro Kitayama

IPC分类号： H01L21/67 ,  H01L21/02 ,  B01J3/06 ,  B08B7/00 ,  B01J3/00

CPC分类号： H01L21/67034 ,  B01J3/008 ,  B01J3/06 ,  B08B7/0021 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67051

摘要： A substrate processing apparatus performs: a pressure raising process of raising a pressure within the processing container to a processing pressure higher than a critical pressure of the processing fluid, after the substrate is accommodated in the processing container; and a circulation process of supplying the processing fluid to the processing container and discharging the processing fluid from the processing container while keeping a pressure at which the processing fluid is maintained in the supercritical state, within the processing container. In the pressure raising process, the supply of the processing fluid from the second fluid supply unit is stopped and the processing fluid is supplied from the first fluid supply unit into the processing container until at least the pressure within the processing container reaches the critical pressure. In the circulation process, the processing fluid is supplied into the processing container from the second fluid supply unit.

公开(公告)号：US09953840B2

公开(公告)日：2018-04-24

申请号：US15371707

申请日：2016-12-07

申请人： Tokyo Electron Limited

发明人： Hiroshi Marumoto ,  Hisashi Kawano ,  Hiromi Kiyose ,  Mitsunori Nakamori ,  Kazuyuki Mitsuoka

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/324 ,  H01L21/67

CPC分类号： H01L21/3065 ,  H01L21/02057 ,  H01L21/02082 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/324 ,  H01L21/67028 ,  H01L21/6704 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708

摘要： A substrate processing method according to the present disclosure includes: a liquid processing process of supplying a processing liquid to a substrate having a surface on which a pattern having a plurality of convex portions is formed; a drying process of removing the processing liquid existing on the surface of the substrate dry the substrate, and a separating process of separating a sticking portion between adjacent ones of the convex portions after the drying process.

公开(公告)号：US20230356255A1

公开(公告)日：2023-11-09

申请号：US18351245

申请日：2023-07-12

申请人： Tokyo Electron Limited

发明人： Michael Carcasi ,  Ihsan Simms ,  Joel Estrella ,  Antonio Luis Pacheco Rotondaro ,  Joshua Hooge ,  Hiroshi Marumoto

IPC分类号： B05C3/04 ,  B05C11/10 ,  H01L21/311 ,  B08B3/10 ,  H01L21/02

CPC分类号： B05C3/04 ,  B05C11/1002 ,  H01L21/31111 ,  B08B3/106 ,  H01L21/0206 ,  B05D1/18

摘要： A method of processing a plurality of substrates includes immersing the plurality of substrates into a bath solution contained in a bath chamber; generating gas bubbles in the bath solution; projecting light from a light source toward the bath chamber; generating light sensor data by capturing light emanating off the bath chamber after interacting with the gas bubbles with a light sensor; and converting the light sensor data into a metric for the bath solution.

公开(公告)号：US20220405902A1

公开(公告)日：2022-12-22

申请号：US17349538

申请日：2021-06-16

申请人： Tokyo Electron Limited

发明人： Joel Estrella ,  Ihsan Simms ,  Michael Carcasi ,  Joshua Hooge ,  Hiroshi Marumoto

IPC分类号： G06T7/00 ,  G06K9/20 ,  G06K9/46 ,  G06T7/11 ,  G10L25/51 ,  G06T7/50 ,  G06K9/00 ,  H01L21/67 ,  B08B3/08 ,  B08B3/10 ,  B08B13/00

摘要： An exemplary method of monitoring a bath process includes processing a first wafer by submerging the first wafer within a bath solution; capturing a video of the bath solution containing the first wafer during a first time interval; analyzing the video based on intensity of light captured in a frame of the video; and based on analyzing the video, determining a first metric of the bath solution during the first time interval.