- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
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申请号: US15915992申请日: 2018-03-08
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公开(公告)号: US20180269170A1公开(公告)日: 2018-09-20
- 发明人: Kaku IGARASHI , Shinjiro KATO , Hisashi HASEGAWA , Masaru AKINO , Yukihiro IMURA
- 申请人: ABLIC Inc.
- 优先权: JP2017-048800 20170314
- 主分类号: H01L23/00
- IPC分类号: H01L23/00
摘要:
Provided is a semiconductor device that is resistant to the corrosion of titanium nitride forming an anti-reflection film. The semiconductor device includes: a wiring layer which includes a wiring film made of aluminum or an aluminum alloy and formed on a substrate and a titanium nitride film formed on the wiring film; a protection layer which covers a top surface and a side surface of the wiring layer; and a pad portion which penetrates the protection layer and the titanium nitride film, and which exposes the wiring film, the protection layer including a first silicon nitride film, an oxide film, and a second silicon nitride film which are layered in the stated order from the side of the wiring layer.