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公开(公告)号:US20180269170A1
公开(公告)日:2018-09-20
申请号:US15915992
申请日:2018-03-08
申请人: ABLIC Inc.
发明人: Kaku IGARASHI , Shinjiro KATO , Hisashi HASEGAWA , Masaru AKINO , Yukihiro IMURA
IPC分类号: H01L23/00
CPC分类号: H01L24/05 , H01L21/02107 , H01L23/3192 , H01L23/562 , H01L24/03 , H01L2224/02123 , H01L2224/02251 , H01L2224/02255 , H01L2224/0226 , H01L2224/03011 , H01L2224/03019 , H01L2224/03614 , H01L2224/0362 , H01L2224/03826 , H01L2224/0391 , H01L2224/04042 , H01L2224/05008 , H01L2224/05124 , H01L2224/05624 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/85205 , H01L2224/85375 , H01L2924/04941 , H01L2924/05042 , H01L2924/05442 , H01L2924/3512
摘要: Provided is a semiconductor device that is resistant to the corrosion of titanium nitride forming an anti-reflection film. The semiconductor device includes: a wiring layer which includes a wiring film made of aluminum or an aluminum alloy and formed on a substrate and a titanium nitride film formed on the wiring film; a protection layer which covers a top surface and a side surface of the wiring layer; and a pad portion which penetrates the protection layer and the titanium nitride film, and which exposes the wiring film, the protection layer including a first silicon nitride film, an oxide film, and a second silicon nitride film which are layered in the stated order from the side of the wiring layer.