Invention Application
- Patent Title: SYSTEM AND METHOD FOR ATOMIC LAYER DEPOSITION
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Application No.: US15934115Application Date: 2018-03-23
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Publication No.: US20180274096A1Publication Date: 2018-09-27
- Inventor: Hyung Sang PARK , Tae Ho YOON , Ji Hye KIM
- Applicant: ISAC RESEARCH INC.
- Priority: KR10-2017-0038228 20170327
- Main IPC: C23C16/455
- IPC: C23C16/455 ; H01L21/02

Abstract:
Disclosed is an atomic layer deposition system and method, the system including a chamber having a first accommodation space to accommodate a first target substrate, and a first gas supplier mounted in the chamber to supply a first gas to the first target substrate, wherein the first gas supplier includes a first fixed block having a rotation space therein and including a (1-1)st passage provided in a first direction of the rotation space and a (1-2)nd passage provided in a second direction of the rotation space, and a first rotatable pipe having a first gas channel therein, having a pipe shape including at least one first gas outlet at a side thereof, and rotatably mounted in the rotation space of the first fixed block to connect the first gas outlet to the (1-1)st or (1-2)nd passage of the first fixed block.
Information query
IPC分类: