公开(公告)号：US20180274096A1

公开(公告)日：2018-09-27

申请号：US15934115

申请日：2018-03-23

Applicant: ISAC RESEARCH INC.

Inventor： Hyung Sang PARK ,  Tae Ho YOON ,  Ji Hye KIM

IPC: C23C16/455 ,  H01L21/02

CPC classification number: C23C16/45551 ,  C23C16/45544 ,  C23C16/45578 ,  C23C16/45589 ,  H01L21/0228

Abstract: Disclosed is an atomic layer deposition system and method, the system including a chamber having a first accommodation space to accommodate a first target substrate, and a first gas supplier mounted in the chamber to supply a first gas to the first target substrate, wherein the first gas supplier includes a first fixed block having a rotation space therein and including a (1-1)st passage provided in a first direction of the rotation space and a (1-2)nd passage provided in a second direction of the rotation space, and a first rotatable pipe having a first gas channel therein, having a pipe shape including at least one first gas outlet at a side thereof, and rotatably mounted in the rotation space of the first fixed block to connect the first gas outlet to the (1-1)st or (1-2)nd passage of the first fixed block.