Invention Application
- Patent Title: INTEGRATED CIRCUIT HAVING HETEROGENEOUS CONTACTS AND SEMICONDUCTOR DEVICE INCLUDING THE INTEGRATED CIRCUIT
-
Application No.: US15909212Application Date: 2018-03-01
-
Publication No.: US20180294219A1Publication Date: 2018-10-11
- Inventor: Tae-hyung Kim , Jung-ho Do , Dae-young Moon , Sang-yeop Baeck , Jae-hyun Lim , Jae-seung Choi , Sang-shin Han
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2017-0046296 20170410
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L29/417 ; H01L29/45

Abstract:
Provided is an integrated circuit which includes: a plurality of conductive lines extending in a first horizontal direction on a plane separate from a gate line, and including first and second conductive lines; a source/drain contact having a bottom surface connected to a source/drain region, and including a lower source/drain contact and an upper source/drain contact which are connected to each other in a vertical direction; and a gate contact having a bottom surface connected to the gate line, and extending in the vertical direction, in which the upper source/drain contact is placed below the first conductive line, and the gate contact is placed below the second conductive line. A top surface of the lower source/drain contact may be larger than a bottom surface of the upper source/drain contact.
Public/Granted literature
- US10580733B2 Integrated circuit having heterogeneous source/drain and gate contacts Public/Granted day:2020-03-03
Information query
IPC分类: