Invention Application
- Patent Title: RAPID CHAMBER CLEAN USING CONCURRENT IN-SITU AND REMOTE PLASMA SOURCES
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Application No.: US15493972Application Date: 2017-04-21
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Publication No.: US20180305814A1Publication Date: 2018-10-25
- Inventor: Keith Fox , Jonathan Church , James Lee , Matthew Mudrow , Kevin Gerber
- Applicant: Lam Research Corporation
- Main IPC: C23C16/44
- IPC: C23C16/44 ; C23C16/455 ; C23C16/505 ; C23C16/40 ; B08B7/00 ; B08B9/08 ; H01L21/02
Abstract:
A method for cleaning a processing chamber of a substrate processing system includes supplying nitrogen trifluoride (NF3) gas to a remote plasma source (RPS); generating RPS plasma using the RPS; supplying the RPS plasma to the processing chamber; supplying NF3 gas as bypass gas to the processing chamber; striking in-situ plasma in the processing chamber while the RPS plasma is supplied; and cleaning the processing chamber during a cleaning period using both the RPS plasma and the in-situ plasma.
Public/Granted literature
- US10161034B2 Rapid chamber clean using concurrent in-situ and remote plasma sources Public/Granted day:2018-12-25
Information query
IPC分类:
