中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

7 records (took 0.012 seconds)

    High power low pressure UV bulb with plasma resistant coating
    2.
    发明授权
    High power low pressure UV bulb with plasma resistant coating 有权

    公开(公告)号：US10354857B2

    公开(公告)日：2019-07-16

    申请号：US15389930

    申请日：2016-12-23

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Xiaolan Chen ,  Matthew Mudrow ,  Curtis Bailey ,  Stephen Lau ,  Mitchell Lamar

    IPC: H01J61/35 ,  H01J65/04 ,  H01L21/26 ,  H01J61/12 ,  H01J61/32 ,  A61L2/10 ,  A61L9/20

    Abstract: An envelope of an ultraviolet (UV) bulb comprises a tube of UV transmissive material configured to contain a UV emissive material and a plasma resistant coating on an inner surface of the tube wherein the coating has been deposited by atomic layer deposition (ALD) and is the only material attached to the inner surface of the tube. The tube can be an endless tube having a circular shape and the coating can be an ALD aluminum oxide coating. The UV transmissive material can comprise quartz or fused silica and the tube can have a wall thickness of about 1 to about 2 mm. The coating can have a thickness of no greater than about 200 nm such as about 120 nm to 160 nm. The circular tube can be formed into a torus shape which can have an outer diameter of about 200 mm and the tube itself can have an outer diameter of about 30 mm. The ALD aluminum oxide coating can be a pinhole free conformal coating. A UV bulb comprising the envelope can contain mercury and inert gas such as argon with pressure inside the UV bulb below 100 Torr. A method of curing a film on a semiconductor substrate, comprises supporting a semiconductor substrate in a curing chamber and exposing a layer on the semiconductor substrate to UV radiation produced by the UV bulb. Other uses include semiconductor substrate surface cleaning or sterilization of fluids and objects.

    HIGH POWER LOW PRESSURE UV BULB WITH PLASMA RESISTANT COATING
    4.
    发明申请
    HIGH POWER LOW PRESSURE UV BULB WITH PLASMA RESISTANT COATING 审中-公开

    公开(公告)号：US20180182607A1

    公开(公告)日：2018-06-28

    申请号：US15389930

    申请日：2016-12-23

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Xiaolan Chen ,  Matthew Mudrow ,  Curtis Bailey ,  Stephen Lau ,  Mitchell Lamar

    IPC: H01J61/35 ,  H01J65/04 ,  H01J61/12 ,  H01J61/32 ,  A61L2/10 ,  H01L21/26 ,  H01L21/02

    CPC classification number: H01J61/35 ,  A61L2/10 ,  A61L9/20 ,  A61L2202/11 ,  A61L2209/212 ,  H01J61/12 ,  H01J61/322 ,  H01J65/042

    Abstract: An envelope of an ultraviolet (UV) bulb comprises a tube of UV transmissive material configured to contain a UV emissive material and a plasma resistant coating on an inner surface of the tube wherein the coating has been deposited by atomic layer deposition (ALD) and is the only material attached to the inner surface of the tube. The tube can be an endless tube having a circular shape and the coating can be an ALD aluminum oxide coating. The UV transmissive material can comprise quartz or fused silica and the tube can have a wall thickness of about 1 to about 2 mm. The coating can have a thickness of no greater than about 200 nm such as about 120 nm to 160 nm. The circular tube can be formed into a torus shape which can have an outer diameter of about 200 mm and the tube itself can have an outer diameter of about 30 mm. The ALD aluminum oxide coating can be a pinhole free conformal coating. A UV bulb comprising the envelope can contain mercury and inert gas such as argon with pressure inside the UV bulb below 100 Torr. A method of curing a film on a semiconductor substrate, comprises supporting a semiconductor substrate in a curing chamber and exposing a layer on the semiconductor substrate to UV radiation produced by the UV bulb. Other uses include semiconductor substrate surface cleaning or sterilization of fluids and objects.

    SPATIALLY TUNABLE DEPOSITION TO COMPENSATE WITHIN WAFER DIFFERENTIAL BOW
    5.
    发明申请
    SPATIALLY TUNABLE DEPOSITION TO COMPENSATE WITHIN WAFER DIFFERENTIAL BOW 有权

    公开(公告)号：US20220298632A1

    公开(公告)日：2022-09-22

    申请号：US17633942

    申请日：2020-08-06

    Applicant: Lam Research Corporation

    Inventor： Fayaz A. Shaikh ,  Adriana Vintila ,  Matthew Mudrow ,  Nick Ray Linebarger, Jr. ,  Xin Yin ,  James F. Lee ,  Brian Joseph Williams

    IPC: C23C16/458 ,  C23C16/44 ,  C23C16/455 ,  C23C16/04 ,  C23C16/509

    Abstract: A plasma processing chamber for depositing a film on an underside surface of a wafer, includes showerhead pedestal. The showerhead pedestal includes a first zone and a second zone. An upper separator fin is disposed over a top surface of the showerhead pedestal and a lower separator fin is disposed under the top surface of the showerhead pedestal and aligned with the upper separator fin. The first zone is configured for depositing a first film to the underside surface of the wafer and the second zone is configured for depositing a second film to the underside surface of the wafer. In another embodiment, a top surface of the showerhead pedestal may be configured to receive a masking plate instead of the upper separator fin. The masking plate is configured with a first area that has openings and a second area that is masked. The first areas is used to provide the process gas to a portion of the underside surface of the wafer for depositing a film.

Patent Agency Ranking