- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
-
申请号: US16016977申请日: 2018-06-25
-
公开(公告)号: US20180308831A1公开(公告)日: 2018-10-25
- 发明人: Yoichiro KURITA , Hideto FURUYAMA , Hiroshi UEMURA , Fumitaka ISHIBASHI
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2016-050211 20160314
- 主分类号: H01L25/16
- IPC分类号: H01L25/16 ; H01L23/00
摘要:
According to one embodiment, at first, a compound semiconductor layer is bonded to a position straddling a plurality of chip formation regions arranged on a substrate. One of the chip formation regions has a first size, and the compound semiconductor layer has a second size smaller than the first size. Thereafter, the compound semiconductor layer is processed to provide compound semiconductor elements on the chip formation regions. Then, the substrate is divided to correspond to the chip formation regions.
信息查询
IPC分类: