SEMICONDUCTOR DEVICE
    1.
    发明公开

    公开(公告)号:US20230288651A1

    公开(公告)日:2023-09-14

    申请号:US17821584

    申请日:2022-08-23

    IPC分类号: G02B6/42 H01L25/16

    摘要: A semiconductor device includes a substrate; a holding member located on the substrate, the holding member including a module placement part and an opening arranged in a first direction; an optical module located in the module placement part and mounted on the substrate; and an optical fiber passing through the opening, the optical fiber being connected with the optical module. The holding member includes a first corner part and a second corner part. The opening is between the first corner part and the second corner part in a direction crossing the first direction. The first corner part and the second corner part are beveled.

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE

    公开(公告)号:US20210175688A1

    公开(公告)日:2021-06-10

    申请号:US17179276

    申请日:2021-02-18

    IPC分类号: H01S5/183 H01S5/042 H01S5/343

    摘要: According to one embodiment, the first process of forming a first light-reflecting structure including forming a patterned dielectric layer on a substrate, forming a first high refractive index layer on the substrate and the dielectric layer, planarizing the first high refractive index layer, forming a mask layer on the first high refractive index layer, forming a periodic structure in the mask layer and the first high refractive index layer, the periodic structure having openings separated at a constant period, forming a low refractive index layer on the mask layer and filling the periodic structure with the low refractive index layer, and performing chemical mechanical polishing to cause the mask layer and the low refractive index layer to form substantially the same plane.

    OPTICAL SEMICONDUCTOR MODULE
    3.
    发明申请

    公开(公告)号:US20190285814A1

    公开(公告)日:2019-09-19

    申请号:US16118689

    申请日:2018-08-31

    IPC分类号: G02B6/42

    摘要: According to one embodiment, the silicon substrate includes a thinned portion and a side wall provided around the thinned portion. The thinned portion is thinned selectively from one surface. The optical element is formed on a surface of the thinned portion. The surface of the thinned portion is opposite to the one surface of the silicon substrate. The light guide member includes a lens portion, a light guide portion, and an alignment portion. The light guide portion is provided between the lens portion and the optical element. The alignment portion is for an optical connector. The thinned portion of the silicon substrate is provided between the light guide portion of the light guide member and the optical element.

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号:US20160104824A1

    公开(公告)日:2016-04-14

    申请号:US14722720

    申请日:2015-05-27

    发明人: Hideto FURUYAMA

    IPC分类号: H01L33/50 H01L33/46 H01L33/22

    摘要: According to one embodiment, a semiconductor light emitting device includes a light emitting element, a fluorescent material layer, and an inorganic material layer. The light emitting element has an asperity surface. The fluorescent material layer is provided on the asperity surface. The fluorescent material layer has a glass member and a fluorescent material dispersed in the glass member. The inorganic material layer is provided between the asperity surface and the fluorescent material layer. The inorganic material layer is in contact with the asperity surface and the fluorescent material layer, and transmissive to light emitted from the light emitting element.

    摘要翻译: 根据一个实施例,半导体发光器件包括发光元件,荧光材料层和无机材料层。 发光元件具有凹凸表面。 荧光材料层设置在凹凸表面上。 荧光体层具有分散在玻璃构件中的玻璃构件和荧光体。 无机材料层设置在凹凸表面和荧光体层之间。 无机材料层与凹凸表面和荧光材料层接触,并且对从发光元件发射的光透射。

    MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    7.
    发明申请
    MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的制造装置及半导体器件的制造方法

    公开(公告)号:US20160079112A1

    公开(公告)日:2016-03-17

    申请号:US14634881

    申请日:2015-03-01

    IPC分类号: H01L21/683

    摘要: A manufacturing apparatus includes a first supporting section to support a first tape section. The first tape section has a first surface facing away from the first supporting section. For example, a semiconductor chip can be disposed on the first surface. A second supporting section of the apparatus supports a second tape section in a facing arrangement with the first tape section. The second tape section has a second surface facing away from the second supporting section. For example, a semiconductor chip can be transferred from the first surface to the second surface in a manufacturing process. A ring element is between the first and second tape sections and surrounds a space between the first and second tape sections. The ring element has a port allowing fluid communication between the space and an outlet port.

    摘要翻译: 制造装置包括支撑第一带部分的第一支撑部分。 第一带部分具有背离第一支撑部分的第一表面。 例如,可以在第一表面上设置半导体芯片。 该设备的第二支撑部分支承与第一带部分相对置的第二带部分。 第二带部分具有背离第二支撑部分的第二表面。 例如,半导体芯片可以在制造过程中从第一表面转移到第二表面。 环形元件位于第一和第二带部分之间,并且包围第一和第二带部分之间的空间。 环形元件具有允许空间和出口之间流体连通的端口。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号:US20150179907A1

    公开(公告)日:2015-06-25

    申请号:US14642421

    申请日:2015-03-09

    IPC分类号: H01L33/62 H01L33/46 H01L33/42

    摘要: A semiconductor light emitting device includes a semiconductor layer including a light emitting layer, a p-side electrode provided on a second surface of the semiconductor layer, and an n-side electrode provided on the semiconductor layer to be separated from the p-side electrode. The p-side electrode includes a plurality of contact metal selectively provided on the semiconductor layer in contact with the second surface, a transparent film provided on the semiconductor layer in contact with the second surface between the plurality of contact metal, and a reflective metal provided on the contact metal and on the transparent film in contact with the contact metal, the reflective metal including silver. A surface area of a surface of the reflective metal on the light emitting layer side is greater than the sum total of a surface area of the plurality of contact metal contacting the semiconductor layer.

    摘要翻译: 半导体发光器件包括:半导体层,包括发光层,设置在半导体层的第二表面上的p侧电极和设置在半导体层上以从p侧电极分离的n侧电极 。 p侧电极包括选择性地设置在与第二表面接触的半导体层上的多个接触金属,设置在与多个接触金属之间的第二表面接触的半导体层上的透明膜和提供的反射金属 在接触金属和与接触金属接触的透明膜上,反射金属包括银。 发光层侧的反射金属的表面的表面积大于与半导体层接触的多个接触金属的表面积的总和。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20150123159A1

    公开(公告)日:2015-05-07

    申请号:US14595869

    申请日:2015-01-13

    IPC分类号: H01L33/62 H01L33/50

    摘要: According to an embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, an second electrode, a first insulating film, a first interconnection and a second interconnection. The semiconductor layer includes a luminous portion and a non-luminous portion. The first electrode is provided on the luminous portion, and the second electrode is provided on the non-luminous portion. The first insulating film is provided on the semiconductor layer, the first electrode and the second electrode. The first interconnection having a first protrusion is provided on the first insulating film and electrically connected to the first electrode. The second interconnection having a second protrusion is provided on the first insulating film and electrically connected to the second electrode. A tip end of the first protrusion faces a tip end of a second protrusion, being apart therefrom with a minimum gap between the first interconnection and the second interconnection.

    摘要翻译: 根据实施例,半导体发光器件包括半导体层,第一电极,第二电极,第一绝缘膜,第一互连和第二互连。 半导体层包括发光部分和非发光部分。 第一电极设置在发光部分上,第二电极设置在非发光部分上。 第一绝缘膜设置在半导体层,第一电极和第二电极上。 具有第一突起的第一互连设置在第一绝缘膜上并与第一电极电连接。 具有第二突起的第二互连设置在第一绝缘膜上并电连接到第二电极。 第一突起的尖端面向第二突起的末端,与第一突起的顶端分开,并且在第一互连和第二互连之间具有最小的间隙。

    LIGHT EMITTING MODULE
    10.
    发明申请
    LIGHT EMITTING MODULE 审中-公开
    发光模块

    公开(公告)号:US20150054004A1

    公开(公告)日:2015-02-26

    申请号:US14532671

    申请日:2014-11-04

    摘要: According to one embodiment, a light emitting module includes a mounting substrate, a plurality of light emitting chips, a transparent layer, and a phosphor layer. The transparent layer is provided between the plurality of light emitting chips on the mounting face and on the light emitting chip. The transparent layer has a first transparent body and a scattering agent dispersed at least in the first transparent body between the plurality of light emitting chips. The scattering agent has a different refraction index from a refraction index of the first transparent body. The phosphor layer is provided on the transparent layer. The light emitting chip includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side external terminal, and an n-side external terminal.

    摘要翻译: 根据一个实施例,发光模块包括安装基板,多个发光芯片,透明层和荧光体层。 透明层设置在安装面上的多个发光芯片和发光芯片之间。 透明层具有至少分散在多个发光芯片之间的第一透明体中的第一透明体和散射剂。 散射剂具有与第一透明体的折射率不同的折射率。 荧光体层设置在透明层上。 发光芯片包括半导体层,p侧电极,n侧电极,p侧外部端子和n侧外部端子。