发明申请
- 专利标题： SEMICONDUCTOR DEVICE WITH POST PASSIVATION STRUCTURE AND FABRICATION METHOD THEREFOR
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申请号： US15642837申请日： 2017-07-06
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公开(公告)号： US20180315723A1公开(公告)日： 2018-11-01
- 发明人: Gulbagh SINGH , Chih-Ming LEE , Chi-Yen LIN , Wen-Chang KUO , C. C. LIU
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L23/522 ; H01L23/58 ; H01L23/528 ; H01L21/78 ; H01L23/544 ; G06F17/50 ; H01L29/06
摘要：
A method of fabricating a semiconductor device includes forming a first contact pad and a second contact pad over a first passivation layer, depositing a first buffer layer over the first contact pad and the second contact pad, and depositing a second buffer layer over the first buffer layer and the second contact pad. The first contact pad is in a circuit region and the second contact pad is in a non-circuit region. An edge of the second contact pad is exposed and a periphery of the first contact pad and an edge of the second contact pad are covered by the first buffer layer.
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