- 专利标题: Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Including Resistance Change Material and Method of Operating
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申请号: US16017249申请日: 2018-06-25
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公开(公告)号: US20180330790A1公开(公告)日: 2018-11-15
- 发明人: Yuniarto Widjaja
- 申请人: Zeno Semiconductor, Inc.
- 主分类号: G11C14/00
- IPC分类号: G11C14/00 ; H01L27/102 ; H01L45/00 ; H01L27/12 ; G11C13/00 ; G11C11/402 ; G11C11/4067
摘要:
Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store data stored in the floating body under any one of a plurality of predetermined conditions. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory is described.