Invention Application
- Patent Title: RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF
-
Application No.: US15594498Application Date: 2017-05-12
-
Publication No.: US20180331282A1Publication Date: 2018-11-15
- Inventor: Mengkai Zhu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
A resistive random access memory (RRAM) structure including a substrate, RRAM cells and protection layers is provided. The RRAM cells are adjacent to each other and disposed on the substrate. The protection layers are disposed respectively on sidewalls of the RRAM cells without covering top surfaces of the RRAM cells. Each of the protection layers includes a sidewall portion and an extension portion. The sidewall portion is disposed on each of the sidewalls of each of the RRAM cells. The extension portion is connected to a lower portion of the sidewall portion. An upper portion of the extension portion is lower than an upper portion of the sidewall portion. The extension portion is connected between the sidewall portions in a region between the RRAM cells.
Public/Granted literature
- US10153432B2 Resistive random access memory structure and manufacturing method thereof Public/Granted day:2018-12-11
Information query
IPC分类:
