- 专利标题: APPARATUSES INCLUDING ELECTRODES HAVING A CONDUCTIVE BARRIER MATERIAL AND METHODS OF FORMING SAME
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申请号: US16045550申请日: 2018-07-25
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公开(公告)号: US20180331287A1公开(公告)日: 2018-11-15
- 发明人: Swapnil A. Lengade , John M. Meldrim , Andrea Gotti
- 申请人: MICRON TECHNOLOGY, INC.
- 申请人地址: US ID BOISE
- 专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人地址: US ID BOISE
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01L27/24
摘要:
Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.