公开(公告)号：US20190115532A1

公开(公告)日：2019-04-18

申请号：US16228469

申请日：2018-12-20

Applicant: Micron Technology, Inc.

Inventor： Enrico Varesi ,  Paolo Fantini ,  Lorenzo Fratin ,  Swapnil A. Lengade

IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

Abstract: Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A component of a memory cell, such as a selector device, storage device, or self-selecting memory device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. The chalcogenide material, for instance, may have a composition of selenium, germanium, and at least one of boron, aluminum, gallium, indium, or thallium. The chalcogenide material may in some cases also include arsenic, but may in some cases lack arsenic.

公开(公告)号：US10069069B2

公开(公告)日：2018-09-04

申请号：US15848477

申请日：2017-12-20

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Swapnil A. Lengade ,  John M. Meldrim ,  Andrea Gotti

IPC: H01L45/00 ,  H01L27/24

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, a second electrode portion is coupled to the second chalcogenide structure, and a third electrode portion is between the first and second electrode portions. A first portion of an electrically conductive barrier material is disposed between the first and third electrode portions. A second portion of the electrically conductive barrier material is disposed between the second and third electrode portions.

公开(公告)号：US11152427B2

公开(公告)日：2021-10-19

申请号：US16544506

申请日：2019-08-19

Applicant: Micron Technology, Inc.

Inventor： Paolo Fantini ,  F. Daniel Gealy ,  Enrico Varesi ,  Swapnil A. Lengade

IPC: H01L27/24 ,  C01B19/00 ,  C01B35/14 ,  G11C11/22 ,  G11C13/00 ,  H01L27/11507 ,  H01L27/11514 ,  H01L45/00

Abstract: Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium.

公开(公告)号：US11081644B2

公开(公告)日：2021-08-03

申请号：US16045550

申请日：2018-07-25

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Swapnil A. Lengade ,  John M. Meldrim ,  Andrea Gotti

IPC: H01L45/00 ,  H01L27/24

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.

公开(公告)号：US10950791B2

公开(公告)日：2021-03-16

申请号：US16039707

申请日：2018-07-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Swapnil A. Lengade ,  John M. Meldrim ,  Andrea Gotti

IPC: H01L45/00 ,  H01L27/24

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.

公开(公告)号：US20240215246A1

公开(公告)日：2024-06-27

申请号：US18596580

申请日：2024-03-05

Applicant: Micron Technology, Inc.

Inventor： Swapnil A. Lengade ,  Jeremy Adams ,  Naiming Liu ,  Jeslin J. Wu ,  Kadir Abdul ,  Carlo Mendoza Orofeo

IPC: H10B43/27 ,  H01L21/02 ,  H10B41/27

CPC classification number: H10B43/27 ,  H01L21/0217 ,  H01L21/02266 ,  H01L21/02274 ,  H10B41/27

Abstract: A method of forming a microelectronic device comprises forming a stack structure comprising a vertically alternating sequence of insulative structures and additional insulative structures, at least some of the additional insulative structures comprising silicon nitride having a ratio of nitrogen atoms to silicon atoms greater than about 1.58:1.00, forming openings through the stack structure, and forming cell pillar structures within the openings, the cell pillar structures individually comprising a semiconductor channel material vertically extending through the stack structure. Related methods, microelectronic devices, memory devices, and electronic systems are also described.

公开(公告)号：US10651381B2

公开(公告)日：2020-05-12

申请号：US16040515

申请日：2018-07-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Swapnil A. Lengade ,  John M. Meldrim ,  Andrea Gotti

IPC: H01L45/00 ,  H01L27/24

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, a second electrode portion is coupled to the second chalcogenide structure, and a third electrode portion is between the first and second electrode portions. A first portion of an electrically conductive barrier material is disposed between the first and third electrode portions. A second portion of the electrically conductive barrier material is disposed between the second and third electrode portions.

公开(公告)号：US20180331287A1

公开(公告)日：2018-11-15

申请号：US16045550

申请日：2018-07-25

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Swapnil A. Lengade ,  John M. Meldrim ,  Andrea Gotti

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1608 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.

公开(公告)号：US20180331286A1

公开(公告)日：2018-11-15

申请号：US16040521

申请日：2018-07-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Swapnil A. Lengade ,  JOHN M. MELDRIM ,  ANDREA GOTTI

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1608 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.

公开(公告)号：US09006702B2

公开(公告)日：2015-04-14

申请号：US14158898

申请日：2014-01-20

Applicant: Micron Technology, Inc.

Inventor： Dale W. Collins ,  D. V. Nirmal Ramaswamy ,  Matthew N. Rocklein ,  Swapnil A. Lengade

IPC: H01L29/24 ,  H01L21/02 ,  H01G9/04

CPC classification number: H01L29/24 ,  H01G9/04 ,  H01L21/02565

Abstract: Semiconductor structures including a zirconium oxide material and methods of forming the same are described herein. As an example, a semiconductor structure can include a zirconium oxide material, a perovskite structure material, and a noble metal material formed between the zirconium oxide material and the perovskite structure material.

Abstract translation: 本文描述了包括氧化锆材料的半导体结构及其形成方法。 作为示例，半导体结构可以包括氧化锆材料，钙钛矿结构材料和形成在氧化锆材料和钙钛矿结构材料之间的贵金属材料。