Invention Application
- Patent Title: METHOD OF FABRICATING PHASE SHIFT MASK AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
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Application No.: US15865636Application Date: 2018-01-09
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Publication No.: US20180341172A1Publication Date: 2018-11-29
- Inventor: Jae-hee KIM , Chan HWANG
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Priority: KR10-2017-0064892 20170525
- Main IPC: G03F1/26
- IPC: G03F1/26 ; G03F1/36 ; H01L29/41 ; H01L21/311 ; H01L21/283

Abstract:
A method for fabricating a phase shift mask includes preparing a transmissive substrate on which a first mask region and a second mask region surrounding the first mask region are defined. In the first mask region, main patterns are formed having a first pitch in a first direction and a second direction perpendicular to the first direction. Each of the main patterns has a first area. In at least one row, assist patterns are formed at the first pitch to surround the main patterns. Each of the assist patterns has a second area less than the first area. In the second mask region, dummy patterns are formed in a plurality of rows. The dummy patterns surround the assist patterns at the first pitch. Each of the dummy patterns has a third area greater than the first area.
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