Invention Application
- Patent Title: LEVEL SHIFTING CIRCUIT
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Application No.: US16052449Application Date: 2018-08-01
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Publication No.: US20180343005A1Publication Date: 2018-11-29
- Inventor: Luca Bartolomeo , Kazuo Eguchi , Giuseppe Davide Bruno
- Applicant: STMicroelectronics KK
- Applicant Address: JP Tokyo
- Assignee: STMicroelectronics KK
- Current Assignee: STMicroelectronics KK
- Current Assignee Address: JP Tokyo
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H01L29/16 ; H03K17/10 ; H03K3/313 ; H01L29/78

Abstract:
A level shifting circuit has an input configured to receive an input signal, wherein the input signal has symmetrical maximum and minimum voltages. The level shifting circuit further includes an output configured to provide an output signal, wherein the output signal has asymmetrical maximum and minimum voltages. The output signal is generated in response to the input signal. The output signal is applied to drive a gate terminal of a SiC MOSFET.
Public/Granted literature
- US10418987B2 Level shifting circuit Public/Granted day:2019-09-17
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