• Patent Title: SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
  • Application No.: US15777884
    Application Date: 2016-11-25
  • Publication No.: US20180351082A1
    Publication Date: 2018-12-06
  • Inventor: Tomoyuki SASAKITohru OIKAWA
  • Applicant: TDK CORPORATION
  • Applicant Address: JP Tokyo
  • Assignee: TDK CORPORATION
  • Current Assignee: TDK CORPORATION
  • Current Assignee Address: JP Tokyo
  • Priority: JP2015-232334 20151127; JP2016-053072 20160316; JP2016-056058 20160318; JP2016-210531 20161027; JP2016-210533 20161027
  • International Application: PCT/JP2016/084968 WO 20161125
  • Main IPC: H01L43/06
  • IPC: H01L43/06 H01L27/22 H01L43/08 H01L43/10 H01L43/14
SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
Abstract:
This spin current magnetization rotational element includes a second ferromagnetic metal layer having a variable magnetization orientation, and spin-orbit torque wiring, which extends in a direction that intersects a direction perpendicular to the surface of the second ferromagnetic metal layer, and is connected to the second ferromagnetic metal layer, wherein the spin resistance of a connection portion of the spin-orbit torque wiring that is connected to the second ferromagnetic metal layer is larger than the spin resistance of the second ferromagnetic metal layer.
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