Invention Application
- Patent Title: SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
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Application No.: US15777884Application Date: 2016-11-25
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Publication No.: US20180351082A1Publication Date: 2018-12-06
- Inventor: Tomoyuki SASAKI , Tohru OIKAWA
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2015-232334 20151127; JP2016-053072 20160316; JP2016-056058 20160318; JP2016-210531 20161027; JP2016-210533 20161027
- International Application: PCT/JP2016/084968 WO 20161125
- Main IPC: H01L43/06
- IPC: H01L43/06 ; H01L27/22 ; H01L43/08 ; H01L43/10 ; H01L43/14

Abstract:
This spin current magnetization rotational element includes a second ferromagnetic metal layer having a variable magnetization orientation, and spin-orbit torque wiring, which extends in a direction that intersects a direction perpendicular to the surface of the second ferromagnetic metal layer, and is connected to the second ferromagnetic metal layer, wherein the spin resistance of a connection portion of the spin-orbit torque wiring that is connected to the second ferromagnetic metal layer is larger than the spin resistance of the second ferromagnetic metal layer.
Information query
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