公开(公告)号：US20240074326A1

公开(公告)日：2024-02-29

申请号：US18280321

申请日：2021-03-12

Applicant: TDK CORPORATION

Inventor： Yugo ISHITANI ,  Tomoyuki SASAKI

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01 ,  H10N50/20 ,  H10N50/85

CPC classification number: H10N50/80 ,  H10B61/00 ,  H10N50/01 ,  H10N50/20 ,  H10N50/85

Abstract: A magnetoresistance effect element includes a laminated body having a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, a first wiring connected to the laminated body, a sidewall insulating layer configured to cover at least a part of a side surface of the laminated body, a first electrode connected to a side of the laminated body opposite to the first wiring, and a second electrode and a third electrode provided on both sides of the laminated body with the sidewall insulating layer sandwiched therebetween, sandwiching the laminated body, and connected to the first wiring.

公开(公告)号：US20230386511A1

公开(公告)日：2023-11-30

申请号：US18234147

申请日：2023-08-15

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: G11B5/39 ,  H01L27/105 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85 ,  G11C11/16 ,  H01F10/193

CPC classification number: G11B5/3909 ,  G11B5/39 ,  H01L27/105 ,  H10B61/22 ,  H10N50/10 ,  H10N50/85 ,  G11C11/161 ,  H01F10/1936 ,  G11B2005/3996 ,  H01F1/405

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB2Ox, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.

公开(公告)号：US20230077612A1

公开(公告)日：2023-03-16

申请号：US17801865

申请日：2020-05-29

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI ,  Takeshi SEKI ,  Koki TAKANASHI

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14

Abstract: A magnetic film includes a ferromagnetic layer. The ferromagnetic layer has a thickness or a width in a first direction which is longer than a thickness or a width in another direction, a crystalline structure is a tetragonal structure, and a main vector direction of a c axis of the tetragonal structure is the first direction.

公开(公告)号：US20230071849A1

公开(公告)日：2023-03-09

申请号：US17983812

申请日：2022-11-09

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/02 ,  H01F10/32 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06

Abstract: This spin element includes: a current-carrying part that extends in a first direction; and an element part that is laminated on one surface of the current-carrying part, wherein the current-carrying part includes a first wiring and a second wiring in order from a side of the element part, and wherein both of the first wiring and the second wiring are metals and temperature dependence of resistivity of the first wiring is larger than temperature dependence of resistivity of the second wiring in at least a temperature range of −40° C. to 100° C.

公开(公告)号：US20220278271A1

公开(公告)日：2022-09-01

申请号：US17631571

申请日：2020-06-24

Applicant: TDK CORPORATION

Inventor： Shinto ICHIKAWA ,  Tsuyoshi SUZUKI ,  Katsuyuki NAKADA ,  Tomoyuki SASAKI

IPC: H01L43/10 ,  H01L43/08

Abstract: In the magnetoresistance effect element according to one aspect, the metal oxide constituting the metal oxide layer has the ratio of oxygen higher than the total ratio of metal when the composition is expressed in the stoichiometric composition; and the resistivity of the metal oxide layer is higher than that of the tunnel barrier layer.

公开(公告)号：US20220277877A1

公开(公告)日：2022-09-01

申请号：US17188511

申请日：2021-03-01

Applicant: TDK CORPORATION

Inventor： Zhenyao TANG ,  Yohei SHIOKAWA ,  Tomoyuki SASAKI

IPC: H01F10/32

Abstract: A magnetic device is equipped with a stacked body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; and an insulator which covers at least a part of side surfaces of the stacked body, in which the insulator has a space outside the side surface of the stacked body.

公开(公告)号：US20220254992A1

公开(公告)日：2022-08-11

申请号：US17171623

申请日：2021-02-09

Applicant: TDK CORPORATION

Inventor： Zhenyao TANG ,  Yohei SHIOKAWA ,  Tomoyuki SASAKI

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14

Abstract: A magnetic device includes a stacked body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a first insulating layer which covers side surfaces of the stacked body; and a radiator located outside the first insulating layer with respect to the stacked body, in which a distance between the stacked body and the radiator differs depending on a position of the stacked body in a stacking direction.

公开(公告)号：US20220190233A1

公开(公告)日：2022-06-16

申请号：US17543314

申请日：2021-12-06

Applicant: TDK CORPORATION

Inventor： Shogo YONEMURA ,  Tomoyuki SASAKI ,  Tatsuo SHIBATA

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

Abstract: A magnetic domain wall movement element includes: a laminate including a ferromagnetic layer, a non-magnetic layer, and a magnetic domain wall movement layer; a first conductive layer; and a first surface layer laminated above a substrate in order from the substrate, wherein the non-magnetic layer is sandwiched between the ferromagnetic layer and the magnetic domain wall movement layer, wherein the first conductive layer is connected to an upper surface of the magnetic domain wall movement layer, wherein the first surface layer contacts at least a part of an upper surface of the magnetic domain wall movement layer, and wherein the resistivity of the first surface layer is higher than the resistivity of the magnetic domain wall movement layer.

公开(公告)号：US20200327400A1

公开(公告)日：2020-10-15

申请号：US16759080

申请日：2018-12-12

Applicant: TDK CORPORATION

Inventor： Tatsuo SHIBATA ,  Tomoyuki SASAKI

IPC: G06N3/063 ,  G06F7/544 ,  G06F7/523 ,  G06F7/50 ,  G06F7/38

Abstract: The product-sum operation device includes a product operator and a sum operator. The product operator includes a plurality of product operation elements, and an alternative element that, when any of the plurality of product operation elements has malfunctioned, is used instead of the malfunctioning product operation element. Each of the plurality of product operation elements and the alternative element is a resistance change element. The sum operator includes an output detector which detects a sum of outputs from the plurality of product operation elements when the alternative element is not used.

公开(公告)号：US20200168383A1

公开(公告)日：2020-05-28

申请号：US16069347

申请日：2018-02-22

Applicant: TDK CORPORATION

Inventor： Tohru OIKAWA ,  Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Tatsuo SHIBATA

IPC: H01F10/32 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: A magnetization rotational element includes a ferromagnetic metal layer, and a spin-orbit torque wiring extending in a first direction intersecting a lamination direction of the ferromagnetic metal layer and having the ferromagnetic metal layer positioned on one surface thereof, in which a direction of spin injected from the spin-orbit torque wiring into the ferromagnetic metal layer intersects a magnetization direction of the ferromagnetic metal layer, and a damping constant of the ferromagnetic metal layer is larger than 0.01.