Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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Application No.: US16110658Application Date: 2018-08-23
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Publication No.: US20180366468A1Publication Date: 2018-12-20
- Inventor: Jonghyuk PARK , Byoungho Kwon , Inho Kim , Hyesung Park , Jin-Woo Bae , Yanghee Lee , Inseak Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2015-0066801 20150513
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/66

Abstract:
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a semiconductor substrate including a first region and a second region, a dummy separation pattern provided on the second region of the semiconductor substrate to have a recessed region at its upper portion, a first electrode provided on the first region of the semiconductor substrate, a dielectric layer covering the first electrode, a second electrode provided on the dielectric layer, and a remaining electrode pattern provided in the recessed region. The second electrode and the remaining electrode pattern may be formed of a same material.
Public/Granted literature
- US10748906B2 Semiconductor device and method of fabricating the same Public/Granted day:2020-08-18
Information query
IPC分类: