Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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Application No.: US15774664Application Date: 2016-02-23
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Publication No.: US20180374795A1Publication Date: 2018-12-27
- Inventor: Yoshinori DEGUCHI , Akinobu WATANABE
- Applicant: Renesas Electronics Corporation
- International Application: PCT/JP2016/055198 WO 20160223
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L23/522 ; H01L23/00 ; H01L23/58 ; H01L23/538 ; H01L21/66

Abstract:
A semiconductor device includes a semiconductor substrate SB and a wiring structure formed on a main surface of the semiconductor substrate SB. The uppermost first wiring layer among a plurality of wiring layers included in the wiring structure includes a pad PD, and the pad PD has a first region for bonding a copper wire and a second region for bringing a probe into contact with the pad. A second wiring layer that is lower by one layer than the first wiring layer among the plurality of wiring layers included in the wiring structure includes a wiring line M6 arranged immediately below the pad PD, the wiring line M6 is arranged immediately below a region other than the first region of the pad PD, and no conductor pattern in the same layer as a layer of the wiring line M6 belong is formed immediately below the first region of the pad PD.
Public/Granted literature
Information query
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