- 专利标题： GATE TIE-DOWN ENABLEMENT WITH INNER SPACER
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申请号： US16120870申请日： 2018-09-04
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公开(公告)号： US20180374932A1公开(公告)日： 2018-12-27
- 发明人: Su Chen Fan , Andre P. Labonte , Lars W. Liebmann , Sanjay C. Mehta
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES Inc.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L23/535 ; H01L21/311 ; H01L27/11 ; H01L21/027
摘要：
A gate tie-down structure includes a gate structure including a gate conductor and gate spacers and inner spacers formed on the gate spacers. Trench contacts are formed on sides of the gate structure. An interlevel dielectric (ILD) has a thickness formed over the gate structure. A horizontal connection is formed within the thickness of the ILD over an active area connecting the gate conductor and one of the trench contacts over one of the inner spacers.
公开/授权文献
- US10522654B2 Gate tie-down enablement with inner spacer 公开/授权日：2019-12-31
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