Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US15868544Application Date: 2018-01-11
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Publication No.: US20190019742A1Publication Date: 2019-01-17
- Inventor: Yanghee LEE , Jonghyuk Park , Choongseob Shin , Hyojin Oh , Boun Yoon , IIyoung Yoon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2017-0088655 20170712
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L27/108 ; H01L21/768 ; H01L25/065

Abstract:
A semiconductor may include a substrate including a cell array region and a TSV region, an insulation layer disposed on the substrate and having a recess region on the TSV region, a capacitor on the insulation layer of the cell array region, a dummy support pattern disposed on the insulation layer of the TSV region and overlapping the recess region, when viewed in plan, and a TSV electrode penetrating the dummy support pattern and the substrate.
Public/Granted literature
- US10535533B2 Semiconductor device Public/Granted day:2020-01-14
Information query
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