公开(公告)号：US10535533B2

公开(公告)日：2020-01-14

申请号：US15868544

申请日：2018-01-11

申请人： Samsung Electronics Co., Ltd.

发明人： Yanghee Lee ,  Jonghyuk Park ,  Choongseob Shin ,  Hyojin Oh ,  Boun Yoon ,  Ilyoung Yoon

IPC分类号： H01L23/48 ,  H01L27/108 ,  H01L21/768 ,  H01L25/065 ,  H01L49/02 ,  H01L21/48

摘要： A semiconductor may include a substrate including a cell array region and a TSV region, an insulation layer disposed on the substrate and having a recess region on the TSV region, a capacitor on the insulation layer of the cell array region, a dummy support pattern disposed on the insulation layer of the TSV region and overlapping the recess region, when viewed in plan, and a TSV electrode penetrating the dummy support pattern and the substrate.

公开(公告)号：US20190019742A1

公开(公告)日：2019-01-17

申请号：US15868544

申请日：2018-01-11

申请人： Samsung Electronics Co., Ltd.

发明人： Yanghee LEE ,  Jonghyuk Park ,  Choongseob Shin ,  Hyojin Oh ,  Boun Yoon ,  IIyoung Yoon

IPC分类号： H01L23/48 ,  H01L27/108 ,  H01L21/768 ,  H01L25/065

摘要： A semiconductor may include a substrate including a cell array region and a TSV region, an insulation layer disposed on the substrate and having a recess region on the TSV region, a capacitor on the insulation layer of the cell array region, a dummy support pattern disposed on the insulation layer of the TSV region and overlapping the recess region, when viewed in plan, and a TSV electrode penetrating the dummy support pattern and the substrate.