- 专利标题: THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
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申请号: US15826011申请日: 2017-11-29
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公开(公告)号: US20190035868A1公开(公告)日: 2019-01-31
- 发明人: Ajeong Choi , Suk Gyu Hahm , Jeong II Park , Yong Uk Lee , Jong Won Chung
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2017-0095367 20170727
- 主分类号: H01L27/32
- IPC分类号: H01L27/32 ; G09G3/3233 ; G09G3/3283 ; H01L51/05 ; G09G3/36
摘要:
Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.
公开/授权文献
- US10651255B2 Thin film transistor and method of manufacturing the same 公开/授权日:2020-05-12